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NE24200 Datasheet, Equivalent, HJ-FET CHIP.

C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

 

 

 

Part NE24200
Description C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
Feature DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka B AND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32400 and N E24200 are Hetero Junction FET chip tha t utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to c reate high mobility electrons.
Its exce llent low noise and high associated gai n make it suitable for commercial syste ms, industrial and space applications.
FEATURES
• Super Low Noise Figure & High Associated Gain NF = 0.
6 dB TYP.
, Ga = 11.
0 dB TYP.
at f = 12 GHz
• Gat e Length : Lg = 0.
25 µm
• Gate Width : Wg = 200 µm ORDER .
Manufacture NEC
Datasheet
Download NE24200 Datasheet
Part NE24200
Description C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
Feature DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka B AND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32400 and N E24200 are Hetero Junction FET chip tha t utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to c reate high mobility electrons.
Its exce llent low noise and high associated gai n make it suitable for commercial syste ms, industrial and space applications.
FEATURES
• Super Low Noise Figure & High Associated Gain NF = 0.
6 dB TYP.
, Ga = 11.
0 dB TYP.
at f = 12 GHz
• Gat e Length : Lg = 0.
25 µm
• Gate Width : Wg = 200 µm ORDER .
Manufacture NEC
Datasheet
Download NE24200 Datasheet

NE24200

NE24200
NE24200

NE24200

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