NE25118

GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER LOW CRSS: 0.02 pF (TYP) HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz LOW NF: 1.1 dB TYP AT 900 MHz LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm ION IMPLANTATION AVAILABLE IN TAPE & REEL OR BULK LOW PACKAGE HEIGHT: 1.0 mm MAX Power Gain, GPS (dB) 20 NE25118 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE GPS 10 VG2S = 1 V VG2S = 0.5 V VG2S = 2 V 10 ID = 10 mA f = 900 MHz 5 NF 0 0 0 5 10 DESCRIPTION The NE25118 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier. As an example, by shorting the second gate to the source, higher gain can be realized than with single gate MESFETs. This device is available in a 4 pin super mini-mold package, (SOT-343 type). Maximum package height of 1.0 mm makes the NE25118 an ideal device for PCMCIA card applications. Drain to Source Voltage, VDS (V) ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOL NF GPS BVDSX IDSS VG1S (OFF) VG2S (OFF) IG1SS IG2SS |YFS| CISS CRSS PARAMETERS AND CONDITIONS Noise Figure at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 900 MHz Power Gain at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 900 MHz Drain to Source Breakdown Voltage at VG1S = -4 V, VG2S = 0, ID = 10 µA Saturated Drain Current at VDS = 5 V, VG2S = 0 V, VG1S = 0 V Gate 1 to Source Cutoff Voltage at VDS = 5 V, VG2S = 0 V, ID = 100 µA Gate 2 to Source Cutoff Volta...