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NE25139 Datasheet, Equivalent, GaAS MESFET.DUAL-GATE GaAS MESFET DUAL-GATE GaAS MESFET |
| Part | NE25139 |
|---|---|
| Description | DUAL-GATE GaAS MESFET |
| Feature | GENERAL PURPOSE DUAL-GATE GaAS MESFET
N E25139
Power DISCONTINU Gain,GPSE (dB) D Noise Figure, NF (dB)
FEATURES
• SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER • LOW CRSS: 0. 02 pF (TYP) • HIGH GPS: 20 dB (TYP) AT 900 MHz • LO W NF: 1. 1 dB TYP AT 900 MHz • LG1 = 1 . 0 µm, LG2 = 1. 5 µm, WG = 400 µm • ION IMPLANTATION • AVAILABLE IN TAPE & REEL OR BULK DESCRIPTION The NE251 i s a dual gate GaAs FET designed to prov ide flexibility in its application as a mixer, AGC amplifier, or low noise amp lifier. As an example, by shorting the second gate to the source, higher gain can be realized than with singl . |
| Manufacture | NEC |
| Datasheet |
| Part | NE25139 |
|---|---|
| Description | DUAL-GATE GaAS MESFET |
| Feature | GENERAL PURPOSE DUAL-GATE GaAS MESFET
N E25139
Power DISCONTINU Gain,GPSE (dB) D Noise Figure, NF (dB)
FEATURES
• SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER • LOW CRSS: 0. 02 pF (TYP) • HIGH GPS: 20 dB (TYP) AT 900 MHz • LO W NF: 1. 1 dB TYP AT 900 MHz • LG1 = 1 . 0 µm, LG2 = 1. 5 µm, WG = 400 µm • ION IMPLANTATION • AVAILABLE IN TAPE & REEL OR BULK DESCRIPTION The NE251 i s a dual gate GaAs FET designed to prov ide flexibility in its application as a mixer, AGC amplifier, or low noise amp lifier. As an example, by shorting the second gate to the source, higher gain can be realized than with singl . |
| Manufacture | NEC |
| Datasheet |
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