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NE25139 Datasheet, Equivalent, GaAS MESFET.

DUAL-GATE GaAS MESFET

DUAL-GATE GaAS MESFET

 

 

 

Part NE25139
Description DUAL-GATE GaAS MESFET
Feature GENERAL PURPOSE DUAL-GATE GaAS MESFET N E25139 Power DISCONTINU Gain,GPSE (dB) D Noise Figure, NF (dB) FEATURES
• SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER
• LOW CRSS: 0.
02 pF (TYP)
• HIGH GPS: 20 dB (TYP) AT 900 MHz
• LO W NF: 1.
1 dB TYP AT 900 MHz
• LG1 = 1 .
0 µm, LG2 = 1.
5 µm, WG = 400 µm
• ION IMPLANTATION
• AVAILABLE IN TAPE & REEL OR BULK DESCRIPTION The NE251 i s a dual gate GaAs FET designed to prov ide flexibility in its application as a mixer, AGC amplifier, or low noise amp lifier.
As an example, by shorting the second gate to the source, higher gain can be realized than with singl .
Manufacture NEC
Datasheet
Download NE25139 Datasheet
Part NE25139
Description DUAL-GATE GaAS MESFET
Feature GENERAL PURPOSE DUAL-GATE GaAS MESFET N E25139 Power DISCONTINU Gain,GPSE (dB) D Noise Figure, NF (dB) FEATURES
• SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER
• LOW CRSS: 0.
02 pF (TYP)
• HIGH GPS: 20 dB (TYP) AT 900 MHz
• LO W NF: 1.
1 dB TYP AT 900 MHz
• LG1 = 1 .
0 µm, LG2 = 1.
5 µm, WG = 400 µm
• ION IMPLANTATION
• AVAILABLE IN TAPE & REEL OR BULK DESCRIPTION The NE251 i s a dual gate GaAs FET designed to prov ide flexibility in its application as a mixer, AGC amplifier, or low noise amp lifier.
As an example, by shorting the second gate to the source, higher gain can be realized than with singl .
Manufacture NEC
Datasheet
Download NE25139 Datasheet

NE25139

NE25139
NE25139

NE25139

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