NE25139

GENERAL PURPOSE DUAL-GATE GaAS MESFET NE25139 Power DISCONTINU Gain,GPSE (dB) D Noise Figure, NF (dB) FEATURES SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER LOW CRSS: 0.02 pF (TYP) HIGH GPS: 20 dB (TYP) AT 900 MHz LOW NF: 1.1 dB TYP AT 900 MHz LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm ION IMPLANTATION AVAILABLE IN TAPE & REEL OR BULK DESCRIPTION The NE251 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier. As an example, by shorting the second gate to the source, higher gain can be realized than with single gate MESFETs. This device is available in a mini-mold (surface mount) package. POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE GPS 20 10 VG2S = 1 V VG2S = 0.5 V VG2S = 2 V ID = 10 mA 10 5 f = 900 MHz NF 0 0 5 0 10 Drain to Source Voltage, VDS (V) ELECTRICAL CHARACTERISTICS (TA = 25°C) SYMBOL NF GPS BVDSX IDSS VG1S (OFF) VG2S (OFF) IG1SS IG2SS |YFS| CISS CRSS PART NUMBER PACKAGE OUTLINE PARAMETERS AND CONDITIONS Noise Figure at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 900 MHz Power Gain at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 900 MHz Drain to Source Breakdown Voltage at VG1S = -4 V, VG2S = 0, ID = 10 µA Saturated Drain Current at VDS = 5 V, VG2S = 0 V, VG1S = 0 V Gate 1 to Source Cutoff Voltage at VDS = 5 V, VG2S = 0 V, ID = 100 µA Gate 2 to Source Cutoff Voltage at VDS = 5 V, VG1S = 0 V, ID = 100 µA Gate 1 Reverse Current at VDS = 0, VG1S = -4V, VG2S = 0 Gate...