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NE32484A-T1 Datasheet, Equivalent, N-CHANNEL HJ-FET.C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| Part | NE32484A-T1 |
|---|---|
| Description | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| Feature | DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE32484A
C to Ku BAND SUPE R LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIPTION
The NE32484A is a Hetero J unction FET that utilizes the hetero ju nction to create high mobility electron s. Its excellent low noise and high ass ociated gain make it suitable for DBS, TVRO and another commercial systems. P ACKAGE DIMENSIONS (Unit: mm) 1. 78 ±0. 2 1 L L FEATURES • Super Low Noise Fi gure & High Associated Gain • Gate Le ngth : Lg ≤ 0. 25 µm • Gate Width : Wg = 200 µm 1. 78 ±0. 2 NF = 0. 6 dB T YP. , Ga = 11. 0 dB TYP. at f = 12 GHz T 2 L 3 L 4 ORDERING INFOR . |
| Manufacture | NEC |
| Datasheet |
| Part | NE32484A-T1 |
|---|---|
| Description | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| Feature | DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE32484A
C to Ku BAND SUPE R LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIPTION
The NE32484A is a Hetero J unction FET that utilizes the hetero ju nction to create high mobility electron s. Its excellent low noise and high ass ociated gain make it suitable for DBS, TVRO and another commercial systems. P ACKAGE DIMENSIONS (Unit: mm) 1. 78 ±0. 2 1 L L FEATURES • Super Low Noise Fi gure & High Associated Gain • Gate Le ngth : Lg ≤ 0. 25 µm • Gate Width : Wg = 200 µm 1. 78 ±0. 2 NF = 0. 6 dB T YP. , Ga = 11. 0 dB TYP. at f = 12 GHz T 2 L 3 L 4 ORDERING INFOR . |
| Manufacture | NEC |
| Datasheet |
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