NE32584

DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. 1.78 ±0.2 1 L L PACKAGE DIMENSIONS (Unit: mm) Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz Gate Length : Lg d 0.2 Pm Gate Width .. : Wg = 200 Pm 1.78 ±0.2 D 2 L 3 L 4 ORDERING INFORMATION SUPPLYING FORM STICK Tape & reel 1000 pcs./reel Tape & reel 5000 pcs./reel PART NUMBER NE32584C-SL NE32584C-T1 LEAD LENGTH L = 1.7 mm MIN. L = 1.0 r 0.2 mm L = 1.0 r 0.2 mm MARKING 1.7 MAX. 0.1 D 0.5 TYP. NE32584C-T1A ABSOLUTE MAXIMUM RATINGS (TA = 25 qC) Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID IG Ptot Tch Tstg 4.0 –3.0 IDSS 100 165 150 –65 to +150 V V mA 1. 2. 3. 4. Source Drain Source Gate PA mW qC qC RECOMMENDED OPERATING CONDITION (TA = 25 qC) CHARACTERISTIC Drain to Source Voltage Drain Current Input Power SYMBOL VDS ID Pin MIN. TYP. 2 10 MAX. 3 20 0 Unit V mA dBm Document No. P12275EJ2V0DS00 (2nd edition) (Previous No. TC-2515) Date Published February 1997 N Printed in Japan © 0.5 TYP. FEATURES 1994 NE32584C ELECTRICAL CHARACTERISTICS (TA = 25 qC)...