NE325S01

www.DataSheet4U.com C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz Noise Figure, NF (dB) NE325S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY 24 VDS = 2 V ID = 10 mA GATE LENGTH: ≤ 0.20 µm GATE WIDTH: 200 µm LOW COST PLASTIC PACKAGE Ga 16 1.0 12 0.5 8 DESCRIPTION 0 NF 1 2 4 6 8 10 14 20 4 30 The NE325S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for commercial systems and industrial applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. Frequency, f (GHz) RECOMMENDED OPERATING CONDITIONS (TA = 25°C) SYMBOLS VDS ID Pin CHARACTERISTICS Drain to Source Voltage Drain Current Input Power UNITS MIN TYP MAX V mA dBm 2 10 3 20 0 ELECTRICAL CHARACTERISTICS (TA = 25°C) NE325S01 S01 UNITS dB dB mA mS V µA 11.0 20 45 -0.2 MIN TYP 0.45 12.5 60 60 -0.7 0.5 -2.0 10 90 MAX 0.55 PART NUMBER PACKAGE OUTLINE SYMBOLS NF1 GA1 IDSS gm VGS(off) IGSO PARAMETERS AND CONDITIONS Noise Figure, VDS = 2 V, ID = 10 mA, f = 12 GHz Associated Gain, VDS = 2 V, ID = 10 mA, f = 12 GHz Saturated Drain Current, VDS = 2 V, VGS = 0 V Transconductance, VDS = 2 V, ID = 10 mA Gate to Source Cutoff Voltage, VDS = 2 V,ID = 100 µA Gate to Source Leak Current, VGS = -3 V Note: 1. Typical values of noise figures an...