NE34018-T2

DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 2 GHz 2 2.1 ±0.2 1.25 ±0.1 (1.25) 0.60 0.65 +0.1 0.3 +0.1 –0.05 0.3 0.4 –0.05 0.3 +0.1 –0.05 0.15 +0.1 –0.05 0.3 +0.1 –0.05 (1.3) 4 0 to 0.1 3 x High associated gain 2.0 ±0.2 Ga = 16 dB TYP. at f = 2 GHz x x x V63 Gate width: Wg = 400 Pm 4 pins super mini mold Tape & reel packaging only available ORDERING INFORMATION PART NUMBER QUANTITY 3 Kpcs/Reel. PACKING STYLE Embossed tape 8 mm wide. Pin 3 (Source), Pin 4 (Drain) face to perforation side of the tape. Embossed tape 8 mm wide. Pin 1 (Source), Pin 2 (Gate) face to perforation side of the tape. NE34018-T1 0.9 ±0.1 NE34018-T2 3 Kpcs/Reel. * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part number for sample order: NE34018) ABSOLUTE MAXIMUM RATINGS (TA = 25 qC) Drain to Source Voltage Gate to Source Voltage Gate Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID Ptot Tch Tstg 4.0 ð3.0 IDSS 150 125 ð65 to +125 V V mA mW qC qC Document No. P11618EJ3V0DS00 (3rd edition) Date Published September 1997 N Printed in Japan 1 PIN CONNECTIONS 1. Source 2. Gate 3. Source 4. Drain © 1996 NE34018 RECOMMENDED OPERATING CONDITION (TA = 25 qC) CHARACTERISTIC Drain to Source Voltage Drain Cur...