NE4210M01

PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE4210M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES Super Low Noise Figure & High Associated Gain NF = 0.8 dB TYP., Ga = 11 dB TYP. at f = 12 GHz 6pin super minimold package Gate Width: Wg = 200µm ORDERING INFORMATION Part Number NE4210M01-T1 Package 6-pin super minimold Supplying Form Embossed tape 8 mm wide. 1, 2, 3 pins face to perforation side of the tape V73 Marking ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS ID IG Ptot Tch Tstg Ratings 4.0 −3.0 IDSS 100 125 125 −65 to +125 Unit V V mA µA mW °C °C The information in this document is subject to change without notice. Document No. P13682EJ1V0DS00 (1st edition) Date Published August 1998 N CP(K) Printed in Japan © 1998 NE4210M01 RECOMMENDED OPERATING CONDITION (TA = 25 °C) Characteristic Drain to Source Voltage Drain Current Input Power Symbol VDS ID Pin MIN. TYP. 2 10 MAX. 3 20 +5 Unit V mA dBm ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductanc...