NE429M01

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES Super low noise figure & High associated gain NF = 0.9 dB TYP., Ga = 10 dB TYP. @ f = 12 GHz 6-pin super minimold package Gate width: Wg = 200µm ORDERING INFORMATION Part Number NE429M01-T1 Package 6-pin super minimold Marking V72 Supplying Form Embossed tape 8 mm wide. 1, 2, 3 pins face to perforation side of the tape Qty 3 kpcs/reel ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS ID IG Ptot Tch Tstg Ratings 4.0 −3.0 IDSS 100 125 125 −65 to +125 Unit V V mA µA mW °C °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P12254EJ3V0DS00 (3rd edition) Date Published November 1999 N CP(K) Printed in Japan The mark shows major revised points. © 1997, 1999 NE429M01 PIN CONNECTIONS (Top View) (Bottom View) Pin No. 1 Pin ...