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NE52118-T1 Datasheet, Equivalent, GaAs HBT.L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT |
| Part | NE52118-T1 |
|---|---|
| Description | L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT |
| Feature | PRELIMINARY DATA SHEET
GaAs HETEROJUNCT ION BIPOLAR TRANSISTOR
NE52118
L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT
FEATURES
• For Low Noise & High Gain amplifiers NF = 1. 0 dB TYP. Ga = 15. 0 d B TYP. MSG = 15. 0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω) OIP3 = 15 dBm TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω) • 4 -pin super minimold package • Grounde d Emitter Transistor ORDERING INFORMAT ION (PLAN) Part Number NE52118-T1 Packa ge 4-pin super minimold Marking V41 Sup plying Form Embossed tape 8 mm wide. Pi n 3, pin 4 face to perforation side of the tape. Qty 3 kp/reel. . |
| Manufacture | NEC |
| Datasheet |
| Part | NE52118-T1 |
|---|---|
| Description | L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT |
| Feature | PRELIMINARY DATA SHEET
GaAs HETEROJUNCT ION BIPOLAR TRANSISTOR
NE52118
L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT
FEATURES
• For Low Noise & High Gain amplifiers NF = 1. 0 dB TYP. Ga = 15. 0 d B TYP. MSG = 15. 0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω) OIP3 = 15 dBm TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω) • 4 -pin super minimold package • Grounde d Emitter Transistor ORDERING INFORMAT ION (PLAN) Part Number NE52118-T1 Packa ge 4-pin super minimold Marking V41 Sup plying Form Embossed tape 8 mm wide. Pi n 3, pin 4 face to perforation side of the tape. Qty 3 kp/reel. . |
| Manufacture | NEC |
| Datasheet |
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