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DB-900-80W

ST Microelectronics

RF Power Amplifier Demoboard

DB-900-80W 80W / 26V / 869-894 MHz PA using 2x PD57045S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD...


ST Microelectronics

DB-900-80W

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DB-900-80W 80W / 26V / 869-894 MHz PA using 2x PD57045S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 80 W min. with 13 dB gain over 869-894 MHz 10:1 LOAD VSWR CAPABILITY BeO FREE AMPLIFIER TYPICAL CDMA PERFORMANCE: IS-95 CD MA / 9ch FWD Pout = 14W Gain = 13 dB Nd = 22% ACPR (750 KHz) : -45 dBc ACPR (1.98 MHz) : -60 dBc DESCRIPTION The DB-900-80W is a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for IS-54/-136 & IS-95 base station applications. The DB-900-80W is designed in cooperation with Europeenne de Telecomunications S.A. (www.etsa.rf), for high gain and broadband performance operating in common source mode at 26 V, capable of withstanding load mismatch up to 10:1 all phases and with harmonics lower than 30 dBc. ABSOLUTE MAXIMUM RATINGS (TCASE = 25oC) Symbol VDD ID PDISS TCASE Pamb Supply voltage Drain Current Power dissipation at Tcase = +85°C Operating Case Temperature Max. Ambient Temperature Parameter Value 32 9 135 -20 to +85 +55 Unit V A W o o ORDER CODE DB-900-80W MECH. SPECIFICATION L=80 mm W=50 mm H=10 mm C C 1/6 November, 20 2002 DB-900-80W ELECTRICAL SPECIFICATION (Tamb = +25oC, Vdd = 26V, Idq = 2 x 200 mA) Symbol FREQ. Gain P1dB Flatness Flatness ND at P1dB IRTL Harmonic VSWR Spurious IMD3 Frequency Range POUT = 80 W Over frequency range: 869 - 894 MHz Over frequency r...




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