NTHD4N02F

NTHD4N02F Power MOSFET and Schottky Diode 20 V, 3.9 A, N−Channel, with 3.7 A Schottky Barrier Diode, ChipFETt Features Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals Super Low Gate Charge MOSFET Ultra Low VF Schottky Pb−Free Package is Available Applications Fast Switching, low Gate Charge for DC−to−DC Buck and Boost Converters Li−Ion Battery Applications in Cell Phones, PDAs, DSCs, and Media Players Load Side Switching MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current Steady TJ = 25°C State TJ = 85°C t v 5 s TJ = 25°C Pulsed Drain Current tp=10 ms Power Dissipation Steady TJ = 25°C State TJ = 85°C t v 5 s TJ = 25°C Continuous Source Current (Body Diode) Operating Junction and Storage Temperature VDSS VGS ID IDM PD IS TJ, TSTG 20 ±12 2.9 2.1 3.9 12 0.91 0.36 2.1 2.6 −55 to 150 V V A A W A °C Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 20 V DC Blocking Voltage VR 20 V Average Rectified Forward Current Steady State tv5s TJ = 25°C IF 2.2 A 3.7 A Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not no...