NTHD5904T1

NTHD5904T1 Power MOSFET Dual N−Channel 3.1 Amps, 20 Volts Features Low RDS(on) for Higher Efficiency Logic Level Gate Drive Miniature ChipFETt Surface Mount Package Saves Board Space Applications Power Management in Portable and Battery−Powered Products; i.e., Cellular and Cordless Telephones and PCMCIA Cards http://onsemi.com DUAL N−CHANNEL 3.1 AMPS, 20 VOLTS RDS(on) = 75 mW MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Steady Symbol 5 secs State Unit Drain−Source Voltage Gate−Source Voltage Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C Pulsed Drain Current Continuous Source Current (Diode Conduction) (Note 1) VDS 20 V VGS "12 V ID A "4.2 "3.0 "3.1 "2.2 IDM "10 A IS 1.8 0.9 A Maximum Power Dissipation (Note 1) TA = 25°C TA = 85°C PD W 2.1 1.1 1.1 0.6 Operating Junction and Storage TJ, Tstg −55 to +150 °C Temperature Range 1. Surface Mounted on 1″ x 1″ FR4 Board. D1 D2 G1 G2 S1 S2 N−Channel MOSFET N−Channel MOSFET ChipFET CASE 1206A STYLE 2 PIN CONNECTIONS MARKING DIAGRAM D1 8 1 S1 1 8 D1 7 2 G1 2 7 A1 D2 6 3 S2 3 6 D2 5 4 G2 4 5 A1 = Specific Device Code ORDERING INFORMATION Device Package Shipping NTHD5904T1 ChipFET 3000/Tape & Reel © Semiconductor Components Industries, LLC, 2005 1 February, 2005 − Rev. XXX Publication Order Number: NTHD5904T1/D NTHD5904T1 THERMAL CHARACTERISTICS Characteristic Symbol Typ Maximum Junction−to−Ambient (Note 2) t v 5 sec Steady S...