N-Channel MOSFET
NTHS5404T1
MOSFET – Power, N-Channel, ChipFET
20 V, 7.2 A
Features
• Low RDS(on) for Higher Efficiency • Logic Level Ga...
Description
NTHS5404T1
MOSFET – Power, N-Channel, ChipFET
20 V, 7.2 A
Features
Low RDS(on) for Higher Efficiency Logic Level Gate Drive Miniature ChipFET Surface Mount Package Saves Board Space Pb−Free Package is Available
Applications
Power Management in Portable and Battery−Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
http://onsemi.com
V(BR)DSS 20 V
RDS(on) TYP 25 mW @ 4.5 V
ID MAX 7.2 A
D
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Steady Symbol 5 Secs State
Unit
Drain−Source Voltage
Gate−Source Voltage
Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C
Pulsed Drain Current
Continuous Source Current (Diode Conduction) (Note 1)
VDS 20 V VGS "12 V ID A
7.2 5.2 5.2 3.8
IDM "20 A IS 7.2 5.2 A
Maximum Power Dissipation (Note 1) TA = 25°C TA = 85°C
Operating Junction and Storage Temperature Range
PD TJ, Tstg
2.5 1.3 1.3 0.7 −55 to +150
W °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
© Semiconductor Components Industries, LLC, 2008
May, 2019− Rev. 5
1
G
S N−Channel MOSFET
ChipFET CASE 1206A
STYLE 1
PIN CONNECTIONS
D8 D7 D6 S5
1D 2D 3D 4G
A2 M G G
MARKING DIAGR...
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