Power MOSFET
NTP52N10 Power MOSFET 52 Amps, 100 Volts
N−Channel Enhancement Mode TO−220
Features
• Source−to−Drain Diode Recovery Ti...
Description
NTP52N10 Power MOSFET 52 Amps, 100 Volts
N−Channel Enhancement Mode TO−220
Features
Source−to−Drain Diode Recovery Time comparable to a Discrete
Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature
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Typical Applications
PWM Motor Controls Power Supplies Converters
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain−to−Source Voltage Drain−to−Source Voltage (RGS = 1.0 MΩ) Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms) Drain − Continuous @ TA 25°C − Continuous @ TA 100°C − Pulsed (Note 1.) Total Power Dissipation @ TA 25°C Derate above 25°C Operating and Storage Temperature Range Single Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 V, VGS = 10 Vdc, IL(pk) = 40 A, L = 1.0 mH, RG = 25 Ω) Thermal Resistance − Junction−to−Case − Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS Value 100 100 "20 "40 52 40 156 178 1.43 −55 to +150 800 Adc Unit Vdc Vdc Vdc
52 AMPERES 100 VOLTS 30 mΩ @ VGS = 10 V
N−Channel D
G S
MARKING DIAGRAM & PIN ASSIGNMENT
4 Drain 4
Watts W/°C °C mJ
TO−220AB CASE 221A STYLE 5 1
NTP52N10 LLYWW 1 Gate 3 Source 2 Drain
°C/W RθJC RθJA TL 0.7 62.5 260 °C
2
3 NTP52N10 LL Y WW
1. Pulse Test: Pulse Width = 10 µs, Duty Cycle = 2%.
= Device Code = Location Code = Year = Work Week
ORDERING INFORMATION
Device NTP52N10 Package TO−220AB Shippi...
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