NTQS6463R2

NTQS6463 Power MOSFET −20 V, −6.8 A, P−Channel TSSOP−8 Features New Low Profile TSSOP−8 Package Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperatures Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones Lithium Ion Battery Applications Note Book PC http://onsemi.com VDSS −20 V RDS(on) TYP 20 mW @ −10 V ID MAX −6.8 A Applications Power Management in Portable and Battery−Powered Products, i.e.: P−Channel D MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Gate−to−Source Voltage Drain Current (Note 1) − Continuous @ TA = 25°C − Continuous @ TA = 70°C − Pulsed (Note 3) Total Power Dissipation (Note 1) @ TA = 25°C Drain Current (Note 2) − Continuous @ TA = 25°C − Continuous @ TA = 70°C − Pulsed (Note 3) Total Power Dissipation (Note 2) @ TA = 25°C Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 40 V, IL = 18.4 A, L = 5.0 mH, RG = 25 W) Thermal Resistance − Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) Symbol VDSS VGS ID ID IDM PD Value −20 "12 −5.5 −4.4 "30 0.93 W Unit V V A 8 G S MARKING DIAGRAM TSSOP−8 CASE 948S PLASTIC 1 463 Y WW N = Device Code = Year = Work Week = MOSFET 463 YWW N A ID ID IDM PD TJ, Tstg EAS −6.8 −5.4 "30 1.39 −55 to +150 845 W °C mJ D S S G PIN ASSIGNMENT 1 2 ...