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NTR1P02LT3

ON Semiconductor

Power MOSFET

NTR1P02LT1 Power MOSFET −20 V, −1.3 A, P−Channel SOT−23 Package These miniature surface mount MOSFETs low RDS(on) assure...


ON Semiconductor

NTR1P02LT3

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Description
NTR1P02LT1 Power MOSFET −20 V, −1.3 A, P−Channel SOT−23 Package These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc−dc converters and power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features http://onsemi.com V(BR)DSS −20 V RDS(on) MAX 220 mW P−Channel D ID MAX −1.3 A Low RDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT−23 Surface Mount Package Saves Board Space Pb−Free Package is Available MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (tp ≤ 10 ms) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Thermal Resistance − Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, (1/8″ from case for 10 s) Symbol VDSS VGS ID IDM PD TJ, Tstg RqJA TL Value −20 ±12 −1.3 −4.0 400 − 55 to 150 300 260 Unit V V A A mW °C °C/W °C 1 2 SOT−23 CASE 318 STYLE 21 3 G S MARKING DIAGRAM/ PIN ASSIGNMENT 3 Drain PO2W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, ...




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