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NUP4301MR6T1

ON Semiconductor

Low Capacitance Diode Array

NUP4301MR6T1 Low Capacitance Diode Array for ESD Protection in Four Data Lines NUP4301MR6T1 is a MicroIntegration™ devic...


ON Semiconductor

NUP4301MR6T1

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Description
NUP4301MR6T1 Low Capacitance Diode Array for ESD Protection in Four Data Lines NUP4301MR6T1 is a MicroIntegration™ device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD (electrostatic discharge). Features http://onsemi.com PIN CONFIGURATION AND SCHEMATIC Low Capacitance (1.5 pf Maximum Between I/O Lines) Single Package Integration Design Provides ESD Protection for JEDEC Standards JESD22 Machine Model = Class C Human Body Model = Class 3B Protection for IEC61000-4-2 (Level 4) 8.0 kV (Contact) 15 kV (Air) Ensures Data Line Speed and Integrity Fewer Components and Less Board Space Direct the Transient to Either Positive Side or to the Ground USB 1.1 and 2.0 Data Line Protection T1/E1 Secondary IC Protection T3/E3 Secondary IC Protection HDSL, IDSL Secondary IC Protection Video Line Protection Microcontroller Input Protection Base Stations I2C Bus Protection I/O 1 VN 2 1/O 3 6 I/O 5 VP 4 I/O 6 5 4 3 MARKING DIAGRAM Applications 1 2 64d TSOP-6 CASE 318F PLASTIC 64 = Specific Device Code d = Date Code ORDERING INFORMATION Device NUP4301MR6T1 Package TSOP-6 Shipping 3000/Tape & Reel MAXIMUM RATINGS (Each Diode) (TJ = 25°C unless otherwise noted) Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage Average Rectified Forward Current (Note 1) (averaged over any 20 ms period) Repetitive Peak Forward Current Non-Repetitive Peak F...




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