NZT751
Discrete POWER & Signal Technologies
NZT751
C
E C B
SOT-223
PNP Current Driver Transistor
This device is des...
NZT751
Discrete POWER & Signal Technologies
NZT751
C
E C B
SOT-223
PNP Current Driver
Transistor
This device is designed for power amplifier,
regulator and switching circuits where speed is important. Sourced from Process 5P.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
60 80 5.0 4.0 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient
Max
*NZT751 1.2 9.7 103
Units
W mW/ °C °C/W
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
© 1997 Fairchild Semiconductor Corporation
NZT751
PNP Current Driver
Transistor
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Sustaining Voltage Collector-...