OBTS949 Datasheet | Smart Lowside Power Switch





(Datasheet) OBTS949 Datasheet PDF Download

Part Number OBTS949
Description Smart Lowside Power Switch
Manufacture Siemens Semiconductor Group
Total Page 11 Pages
PDF Download Download OBTS949 Datasheet PDF

Features: HITFET® BTS 949 Smart Lowside Power Sw itch Features • Logic Level Input • Input Protection (ESD) • Thermal Shu tdown • Overload protection • Short circuit protection • Overvoltage pro tection • Current Product Summary Dr ain source voltage On-state resistance Current limit Nominal load current Clam ping energy VDS RDS(on) ID(lim) ID(ISO ) EAS 60 18 9.5 19 V mΩ A A 6000 m J limitation • Maximum current adju stable with external resistor • Curre nt sense • Status feedback with exter nal input resistor • Analog driving p ossible Application • All kinds of resistive, inductive and capacitive loa ds in switching or linear applications • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits General Description N channe l vertical power FET in Smart SIPMOS ® chip on chip technology. Fully protect ed by embedded protected functions. V b b + LOAD NC Drain dv/dt limitation Current limitation Overvoltage protection M 2 3 1 IN 4 .

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HITFET®BTS 949
Smart Lowside Power Switch
Features
Product Summary
Logic Level Input
Drain source voltage
Input Protection (ESD)
On-state resistance
Thermal Shutdown
Current limit
Overload protection
Nominal load current
Short circuit protection
Clamping energy
Overvoltage protection
Current limitation
Maximum current adjustable with external resistor
Current sense
Status feedback with external input resistor
Analog driving possible
VDS
RDS(on)
ID(lim)
ID(ISO)
EAS
60 V
18 m
9.5 A
19 A
6000 mJ
Application
All kinds of resistive, inductive and capacitive loads in switching or
linear applications
µC compatible power switch for 12 V and 24 V DC applications
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS® chip on chip tech-
nology. Fully protected by embedded protected functions.
1
IN
2
NC
dv/dt
limitation
Current
limitation
Overvoltage
protection
Vbb
+
LOAD
Drain
3
M
4 CC
RCC
ESD
Overload
protection
Over-
temperature
protection
SShhoorrtt cciirrccuuiitt
pprrootteeccttiioonn
Source
HITFET®
5
Semiconductor Group
Page 1
14.07.1998

                    
           






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