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OH023 Dataheets PDF



Part Number OH023
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description GaAs hall element
Datasheet OH023 DatasheetOH023 Datasheet (PDF)

GaAs Hall Elements MA111 OH023 GaAs hall element Magnetic sensor s Features 0.95 2.9±0.2 2.8 –0.3 0.65±0.15 +0.2 Unit : mm 0.65±0.15 +0.2 1.5 –0.3 0.5R 1.9±0.2 q q q q Hall voltage : typ. 90mV(VC= 3V, B= 0.1T) Input resistance : typ. 2kΩ(min. 1.5kΩ) Output resistance : typ. 7kΩ (max. 10kΩ) Sealed in the Mini type (4-pin) package. Automatic insertion through taping and magazine. 4 1 0.95 3 2 1.1 –0.1 s Applications q Various hall motor (Applicable to CD, VD, VCR, FDD, and other p.

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GaAs Hall Elements MA111 OH023 GaAs hall element Magnetic sensor s Features 0.95 2.9±0.2 2.8 –0.3 0.65±0.15 +0.2 Unit : mm 0.65±0.15 +0.2 1.5 –0.3 0.5R 1.9±0.2 q q q q Hall voltage : typ. 90mV(VC= 3V, B= 0.1T) Input resistance : typ. 2kΩ(min. 1.5kΩ) Output resistance : typ. 7kΩ (max. 10kΩ) Sealed in the Mini type (4-pin) package. Automatic insertion through taping and magazine. 4 1 0.95 3 2 1.1 –0.1 s Applications q Various hall motor (Applicable to CD, VD, VCR, FDD, and other portable equipment) Applicable to wide-varying field (OA equipment, etc.) q 1 : VH Output – side – side 2 : VC Input 3 : VH Output + side + side 4 : VC Input Mini Type Package (4-pin) Marking Symbol : OT s Absolute Maximum Ratings (Ta= 25˚C) Parameter Control voltage Power dissipation Operating ambient temperature Storage temperature Symbol VC PD Topr Tstg Rating 6 150 –10 to +125 – 55 to +125 Unit V mW ˚C ˚C s Electrical Characteristics (Ta= 25˚C) Parameter Hall voltage Unbalance voltage Input Resistance Output resistance Temperature coefficient of hall voltage Temperature coefficient of input resistance Linearity of hall voltage *1 VH =  VH + Symbol VH *1 VHO RIN ROUT β α γ ∗2 Condition VC= 3V, B= 0.1T VC= 3V, B= 0T IC= 0.1mA, B= 0T IC= 0.1mA, B= 0T IC=1.5mA, B= 0.1T IC= 0.1mA, B= 0T IC=1mA, B= 0.05T/0.1T min 70 1.5 5 typ 90 2 7 0 to 0.1 0.4±0.2 0.8 max 110 ±9.5 3 10 – 0.06 0.3 2 0.16 –0.06 +0.2 +0.1 0.4 –0.05 +0.1 Unit mV mV kΩ kΩ %/˚C %/˚C % +  VH – 2 *2 The linearity γ of VH is a percentage of the cumulative sensitivity of KH0.05 and KH0.1 measured at B= 0.05T and 0.1T for the average value. KH0.1 – KH0.05 VH γ= ( Percentage of the cumulative sensitivity KH = ) 1/2 (KH0.05 + KH0.1) IC · B GaAs Hall Elements OH023 PD – Ta 200 180 160 200 240 VH – Ta 4000 B=0.1T IC=1.5mA RIN – Ta B=0 IC=0.1mA (mW) 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 Ta (˚C) Ambient temperature 160 Power dissipation Hall voltage 120 Input resistance RIN (Ω) – 40 0 40 80 Ta 120 (˚C) 3000 PD VH (mV) 2000 80 1000 40 0 Ambient temperature 0 –40 0 40 80 120 Ambient temperature Ta (˚C) VH – B 200 VC=3V Ta=25˚C 320 280 240 VH – IC 320 B=0.1T Ta=25˚C 280 240 VH – VC B=0.1T Ta=25˚C 150 Hall voltage VH (mV) Hall voltage VH (mV) 200 160 120 80 40 Hall voltage VH (mV) 0 1 2 3 4 200 160 120 80 40 0 0 1 2 3 4 5 6 7 8 100 50 0 0 0.04 0.08 0.12 0.16 0.20 Magnetic flux density B (T) 0 Control current IC (mA) Control voltage VC (V) s Typical Drive Circuit +5V 4 3 2 1 – + +5V –5V –5V –V +V .


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