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OH10010

Panasonic Semiconductor

GaAs Hall Device


Description
GaAs Hall Devices OH10010 GaAs Hall Device Magnetic sensor I Features Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) Input resistance: typ. 0.75 kΩ Satisfactory linearity of GaAs hall voltage with respect to the magnetic field Small temperature coefficient of the hall voltage: β ≤ − 0.06%/°C Mini type (4-pin) package with positioning projection. ...



Panasonic Semiconductor

OH10010

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