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ON1109 Dataheets PDF



Part Number ON1109
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Photo Interrupter
Datasheet ON1109 DatasheetON1109 Datasheet (PDF)

Transmissive Photosensors (Photo Interrupters) ON1109 Photo Interrupter Unit : mm For contactless SW, object detection Outline ON1109 is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected. Mark for indicating LED side ø1.5 2-C2.0±0.3 28.0±0.35 17.0±.

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Transmissive Photosensors (Photo Interrupters) ON1109 Photo Interrupter Unit : mm For contactless SW, object detection Outline ON1109 is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected. Mark for indicating LED side ø1.5 2-C2.0±0.3 28.0±0.35 17.0±0.3 5.0±0.2 A Device center 1.0±0.2 13.0±0.2 4.0 min. 3.0±0.2 A' (12.0) 2 22.4±0.2 2-0.45±0.2 Features Highly precise position detection : 0.7 mm Fast response : tr, tf = 6 µs (typ.) Small output current variation against change in temperature Deep and wide gap between emitting and detecting elements 7.0±0.2 3 2-ø3.2±0.2 2 3 1 4 (Note) ( ) Dimension is reference Absolute Maximum Ratings (Ta = 25˚C) Parameter Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Symbol Ratings VR IF PD*1 IC 3 50 75 20 30 5 100 Unit V mA mW mA V V *1 Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO Collector power dissipation Temperature Operating ambient temperature Storage temperature PC*2 mW ˚C ˚C Topr –25 to +85 Tstg –30 to +100 Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 1.34 mW/˚C at Ta ≥ 25˚C. Electrical Characteristics (Ta = 25˚C) Parameter Input characteristics Reverse current (DC) Forward voltage (DC) Collector cutoff current Symbol VF IR ICEO CC VR = 3V VCE = 10V VCE = 10V, f = 1MHz 0.3 6 0.3 5 Conditions IF = 50mA min typ 1.2 max 1.5 10 200 Unit V µA nA pF mA µs V Output characteristics Collector to emitter capacitance Collector current IC VCE = 10V, IF = 20mA Transfer Response time tr , tf* VCC = 10V, IC = 1mA, RL = 100Ω characteristics Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA * Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value) ,, ,, 50Ω RL ,, ,, 1 Pin connection 3.0±0.3 2.0±0.2 (2.54) SEC. A-A' 4 1 Transmissive Photosensors (Photo Interrupters) ON1109 IF , IC — Ta 60 60 IF — VF 10 2 Ta = 25˚C IC — IF VCE = 10V Ta = 25˚C IF , IC (mA) 50 IF 50 IC (mA) Collector current Forward current, collector current 40 IF (mA) 10 40 Forward current 30 IC 30 1 20 20 10 –1 10 10 0 – 25 0 20 40 60 80 100 0 0 0.4 0.8 1.2 1.6 2.0 2.4 10 –2 10 –1 1 10 10 2 Ambient temperature Ta (˚C ) Forward voltage VF (V) Forward current IF (mA) VF — Ta 1.6 10 2 IC — VCE 160 Ta = 25˚C IC — Ta VCE = 10V IF = 20mA IC (mA) VF (V) 1.2 IF = 50mA 10 IF = 30mA 20mA 1 10mA IC (%) .


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