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ON1110

Panasonic Semiconductor

Photo Interrupter

Transmissive Photosensors (Photo Interrupters) ON1110 Photo Interrupter For contactless SW, object detection Outline ON...


Panasonic Semiconductor

ON1110

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Description
Transmissive Photosensors (Photo Interrupters) ON1110 Photo Interrupter For contactless SW, object detection Outline ON1110 is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected. 1.6 Unit : mm Mark for indicating LED side 2.0 ø1.2 3.0±0.3 2.0±0.2 13.8±0.3 2.8±0.2 A 0.4±0.1 8.8±0.2 0.5 Features Highly precise position detection : 0.3 mm Fast response : tr, tf = 6 µs (typ.) Small output current variation against change in temperature Small package used for saving mounting space Device center A' 3.0 *10.0±0.4 3 2 4 1 0.5 1.8±0.2 8.0 min. 2 0.8 6.0±0.2 4.0 1.6 ,, ,, 0.7 *2.54 SEC. A-A' 3 4 Absolute Maximum Ratings (Ta = 25˚C) Parameter Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Symbol Ratings VR IF PD*1 IC 3 50 75 20 30 5 100 Unit V mA mW mA V V mW ˚C ˚C *1 1 Pin connection (Note) * is dimension at the root of leads Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO Collector power dissipation Temperature Operating ambient temperature Storage temperature PC*2 Topr –25 to +85 Tstg –30 to +100 Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 1.33 mW/˚C at Ta ≥ 25˚C. Electrica...




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