ON2170

Reflective Photosensors (Photo Reflectors) CNB1302 Reflective Photosensor Overview CNB1302 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Si phototransistor in a single resin package. Unit : mm Mark for indicating anode side C0.5 1 3 9.0±1.0 2.0±0.2 Chip center Ultraminiature, thin type : 2.7 × 3.4 mm (height : 1.5 mm) Visible light cutoff resin is used Fast response : tr, tf = 20µs (typ.) Easy interface for control circuit 9.0±1.0 2.7±0.2 0.4 4-0.7 4-0.5 ±0.1 2 1.8 Features 2.0±0.2 4 0.5 0.15 Control of motor and other rotary units Detection of position and edge Detection of paper, film and cloth Start, end mark detection of magnetic tape Absolute Maximum Ratings (Ta = 25˚C) Parameter Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Output (Photo Collector to emitter voltage transistor) Emitter to collector voltage Collector power dissipation Temperature Operating ambient temperature Storage temperature Reverse voltage (DC) Symbol Ratings VR IF PD*1 IC VCEO VECO PC *2 Unit V mA mW mA V V mW ˚C ˚C *1 3 50 75 20 30 5 50 –25 to +85 Topr Tstg –30 to +100 Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 0.67 mW/˚C at Ta ≥ 25˚C. Electrical Characteristics (Ta = 25˚C) Paramwter Input Reverse current (DC) characteristics Capacitance between terminals Output characteristics Collector cutof...