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OSC-03C

Advanced Semiconductor

NPN SILICON RF POWER TRANSISTOR

OSC-0.3C NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .138 2L FLG DESCRIPTION: The ASI OSC-0.3C is Designed for B A F...


Advanced Semiconductor

OSC-03C

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Description
OSC-0.3C NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .138 2L FLG DESCRIPTION: The ASI OSC-0.3C is Designed for B A FEATURES: Omnigold™ Metalization System C F E D MAXIMUM RATINGS IC VCB PDISS TJ TSTG θ JC 225 mA 25 V 5.0 W @ TC = 25 C -65 OC to +200 OC -65 OC to +200 OC 30 OC/W O DIM A B C D E F MINIMUM inches / mm MAXIMUM inches / mm .025 / 0.635 .138 / 3.505 .275 / 6.985 .375 / 9.525 .031 / 0.787 .062 / 1.575 ORDER CODE: ASI10636 CHARACTERISTICS SYMBOL BVCEO BVCBO IEBO ICBO hFE COB ηC | S21C| POSC 2 TC = 25 C O NONETEST CONDITIONS IC = 1.0 mA IC = 100 µA IEB = 1.0 V VCB = 15 V VCE = 8.0 V VCB = 10 V VCC = 12 V VCE = 8.0 V VCC = 12 V POUT = 0.3 W IC = 100 mA IC = 120 mA IC = 100 mA f = 1.0 MHz f = 7.5 GHz f = 1.0 GHz f = 7.5 GHz MINIMUM TYPICAL MAXIMUM 16 25 2.0 500 20 200 1.5 22 4.0 320 UNITS V V µA µA --pF % dB mW A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...




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