SCR Thyristor. P0102BL Datasheet

P0102BL Thyristor. Datasheet pdf. Equivalent

Part P0102BL
Description SCR Thyristor
Feature P0102BL Sensitive high immunity 0.25 A SCR Thyristor Datasheet - production data Features  IT(RM.
Manufacture ST Microelectronics
Datasheet
Download P0102BL Datasheet



P0102BL
P0102BL
Sensitive high immunity 0.25 A SCR Thyristor
Datasheet - production data
Features
IT(RMS) 0.25 A
Low 200 µA gate current
High noise immunity 200 V/µs
ECOPACK®2 compliant component
Applications
Standby mode power supplies
Smoke detectors
DC 24/48 V proximity sensors
Gate driver for large Thyristors
Overvoltage crowbar protection
Capacitive ignition circuit
Description
Thanks to highly sensitive triggering levels, the
0.25 A P0102BL SCR Thyristor is suitable for all
applications where available gate current is
limited. Its high immunity makes it ideal for high
electric noise circuits.
The surface mount SOT23-3L package allows
compact SMD based designs for automated
manufacturing.
Table 1: Device summary
Symbol
Value
Unit
IT(RMS)
VDRM/VRRM
IGT
Tj max.
0.25 A
200 V
200 µA
125 °C
August 2017
DocID030705 Rev 2
This is information on a product in full production.
1/8
www.st.com



P0102BL
Characteristics
P0102BL
1 Characteristics
Table 2: Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise specified
Symbol
Parameter
Value
Unit
IT(RMS)
IT(AV)
RMS on-state current
(180 ° conduction angle)
Average on-state current
(180 ° conduction angle)
Tamb = 36 °C
0.25
0.16
A
ITSM
Non repetitive surge peak on-state current
(Tj initial = 25 °C
I2t I2t value for fusing
Critical rate of rise of on-state
dl/dt current
IG = 2 x IGT, tr ≤ 100 ns
f = 60 Hz
VDRM/VRRM Repetitive peak off-state voltage
IGM Peak gate current
tp = 20 µs
PG(AV) Average gate power dissipation
Tstg Storage junction temperature range
Tj Operating junction temperature
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
7
6
0.18
A
A2s
50 A/µs
200
0.5
0.02
-40 to +150
-40 to +125
V
A
W
°C
°C
Table 3: Electrical characteristics (Tj = 25 °C unless otherwise specified)
Symbol
Test conditions
Value
IGT
VGT
VGD
VRG
IH
IL
dV/dt
VD = 12 V, RL = 140 Ω
VD = VDRM, RL = 3.3 kΩ, RGK = 1000 Ω
IRG = 10 µA
IT = 50 mA, RGK = 1000 Ω
IG = 1.2 x IGT, RGK = 1000 Ω
VD = 67 % VDRM, RGK = 1000 Ω
Tj = 125 °C
Tj = 125 °C
Max.
Max.
Min.
Min.
Max.
Max.
Min.
200
0.8
0.1
8
6
7
200
Unit
µA
V
V
V
mA
mA
V/µs
Symbol
VTM
VTO
RD
IDRM/IRRM
Test conditions
Table 4: Static characteristics
ITM = 0.4 A, tp = 380 µs
Threshold voltage
Dynamic resistance
VD = VDRM; VR = VRRM, RGK = 1000 Ω
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Max.
Max.
Max.
Max.
Value
1.7
1
1000
1
100
Unit
V
mΩ
µA
Symbol
Rth(j-a)
Table 5: Thermal parameters
Parameter
Junction to ambient (Mounted on FR4 with recommended pad layout)
Value Unit
400 °C/W
2/8 DocID030705 Rev 2





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