Document
MOSFET 30A 450~500V
PD4M441H PD4M440H P2H4M441H P2H4M440H
PD4M441H/440H
P2H4M441H/440H
108.0
108.0
Approximate Weight :220g Maximum Ratings
Approximate Weight :220g
Rating
Drain-Source Voltage
Symbol VDSS
PD4M441H/P2H4M441H 450
VGS=0V
Grade PD4M440H/P2H4M440H
500
Unit V
Gate-Source Voltage Continuous Drain Current
Duty=50% D.C.
VGSS ID
20
30 c=25 21 c=25
V A
Pulsed Drain Current
IDM
60 c=25
A
Total Power Dissipation
PD
230 c=25
W
Operating Junction Temperature Range
Tjw
40 +150
Storage Temperature Range
RMS Isolation Voltage
Mountin1g Torque
Tstg
Viso -
Ftor
3.0 2.0
40 +125
2000
,AC1
Terminals to Base, AC 1 min .
Module Base to Heat sink
Bus bar to Main Terminals
V Nm
DRAIN CURRENT ID (A)
50 40 30 20 10
0 0 2 4 6 8 10 12 DRAIN TO SOURCE VOLTAGE VDS (V)
DRAIN TO SOURCE ON VOLTAGE VDS (on)(V)
8 16
DRAIN TO SOURCE ON VOLTAGE VDS (on)(V)
6 12
48
24
0 0 4 8 12 16 GATE TO SOURCE VOLTAGE VGS (V)
0 -40 0 40 80 120 160
JUNCTION TEMPERATURE Tj ( )
CAPACITANCE C (nF)
12
10
8
6
4
2
0 12
5 10 20
50 100
DRAIN TO SOURCE VOLTAGE VDS (V)
GATE TO SOURCE VOLTAGE VGS (V)
16 5
SWITCHING TIME t ( s)
2 12
1
8 0.5
4
0 0 40 80 120 160 200 240 TOTAL GATE CHRAGE Qg (nC)
0.2 0.1 0.05
2
5 10 20
50 100 200
SERIES GATE IMPEDANCE RG ( )
SWITCHING TIME t (ns)
1000 500
200 100
50
20 10
1
2 5 10 20 DRAIN CURRENT ID (A)
50
200 100
50
20 10
5
2 1 0.5
0.2 1
2 5 10 20 50 100 200 500 1000 DRAIN TO SOURCE VOLTAGE VDS (V)
SOURCE CURRENT IS (A)
60 500
REVERSE RECOVERY TIME trr (ns) REVERSE CURRENT IR (A)
50 200
40 100 30 50
20 20
10 10
0 0 0.4 0.8 1.2 1.6 SOURCE TO DRAIN VOLTAGE VSD (V)
5 0 100 200 300 400 500 600 -dis/dt (A/ s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)]
2 100
5
2 10-1
5
2
10-2 10
-5
10-4
10-3
10-2
10-1
100
101
PULSE DURATION t (s)
2 100
5
2 10-1
5
2
10-2 10
-5
10-4
10-3
10-2
10-1
100
101
PULSE DURATION t (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)]
DRAIN CURRENT ID (A)
.