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P2N2222A Data Sheet

Amplifier Transistors

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P2N2222A

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by P2N2222A/D Amplifier Transistors NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER P2N2222A MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipat.

P2N2222A

Download P2N2222A Datasheet

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by P2N2222A/D Amplifier Transistors NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER P2N2222A MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 75 6.0 600 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characte.




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