NIKO-SEM
N-Channel Logic Level Enhancement Mode Field Effect Transistor
P3056LS
TO-263
D
PRODUCT SUMMARY V(BR)DSS 25 ...
NIKO-SEM
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
P3056LS
TO-263
D
PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 50mΩ ID 12A 1. GATE 2. DRAIN 3. SOURCE
G S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Energy Repetitive Avalanche Energy Power Dissipation
2 1
SYMBOL VGS
LIMITS ±12 12 8 45 60 3 43 15 -55 to 150 275
UNITS V
TC = 25 °C TC = 100 °C
ID IDM
A
L = 0.1mH L = 0.05mH TC = 25 °C TC = 100 °C
EAS EAR PD Tj, Tstg TL
mJ
W
Operating Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink
1 2 1
°C
SYMBOL RθJC RθJA RθCS
TYPICAL
MAXIMUM 2.6 60
UNITS
°C / W
0.6
Pulse width limited by maximum junction temperature. Duty cycle ≤ 1%
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±12V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C 25 0.5 0.7 1.0 ±250 nA 25 250 µA V LIMITS UNIT MIN TYP MAX
1
AUG-09-2001
NIKO-SEM
1
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
ID(ON) RDS(ON)
1
P3056LS
TO-263
On-State Drain Current Drain-Source On-State 1 ...