(Datasheet) G20N60B3D PDF Download
||40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
||Download G20N60B3D Datasheet PDF
Data Sheet December 2001
4 0A, 600V, UFS Series N-Channel IGBT wit h Anti-Parallel Hyperfast Diode
The HGT G20N60B3D is a MOS gated high voltage s witching device combining the best feat ures of MOSFETs and bipolar transistors . The device has the high input impedan ce of a MOSFET and the low on-state con duction loss of a bipolar transistor. T he much lower on-state voltage drop var ies only moderately between 25oC and 15 0oC. The diode used in anti-parallel wi th the IGBT is the RHRP3060. The IGBT i s ideal for many high voltage switching applications operating at moderate fre quencies where low conduction losses ar e essential. Formerly developmental typ e TA49016.
• 40A, 600V at T C = 25oC • Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC • Short Circuit Rated • Low Conduction Loss • Hyperfast Anti-Para llel Diode
JEDEC STYLE TO-24 7
E C G
PART NUMB ER HGTG20N60B3D PACKAGE TO-247 BRAND G20N60B3D
COLLECTOR (BOTTOM SIDE MET.
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40A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG20N60B3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. The device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The
diode used in anti-parallel with the IGBT is the RHRP3060.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential.
Formerly developmental type TA49016.
NOTE: When ordering, use the entire part number.
• 40A, 600V at TC = 25oC
• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC
• Short Circuit Rated
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
JEDEC STYLE TO-247
(BOTTOM SIDE METAL)
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
©2001 Fairchild Semiconductor Corporation
HGTG20N60B3D Rev. B