40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Description
HGTG20N60B3D
Data Sheet December 2001
40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much ...
