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saturation voltage. DN500 Datasheet |
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Semiconductor
Description
• Extremely low collector-to-emitter saturation voltage
( VCE(SAT)=0.2V Typ. @IC /IB=3A/150mA)
• Suitable for low voltage large current drivers
• Complementary pair with DP500
• Switching Application
Ordering Information
Type NO.
DN500
Outline Dimensions
Marking
DN500
DN500
NPN Silicon Transistor
Package Code
T O- 92
unit : mm
KST-9086-002
PIN Connections
1. Emitter
2. Collector
3. Base
1
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Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
VC B O
VC E O
VE B O
IC
PC
Tj
Tstg
Ratings
15
12
5
5
625
150
- 55~150
DN500
(Ta=25° C)
Unit
V
V
V
A
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter on voltage
Base-Emitter on voltage
Transition frequency
Collector output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat1)
VBE(sat)
fT
Cob
Test Condition
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=15V, IE=0
VEB=4V, IC=0
VCE=2V, IC=500mA
VCE=2V, IC=3A
IC=3A, IB=150mA
IC=3A, IB=150mA
VCB=5V, IC=500mA
VCB=10V, IE=0, f=1MHz
Min.
15
12
5
-
-
160
40
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
150
-
(Ta=25° C)
Max. Unit
-V
-V
-V
0.1 µA
0.1 µA
320 -
--
0.3 V
1.2 V
- MHz
50 pF
KST-9086-002
2
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