PSMN008-75B

PSMN008-75P; PSMN008-75B N-channel enhancement mode field-effect transistor Rev. 01 — 18 September 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PSMN008-75P in SOT78 PSMN008-75B in SOT404 (D2-PAK). 2. Features s Fast switching s Low on-state resistance s Avalanche ruggedness rated. 3. Applications s DC to DC converters s Uninterruptable power supplies. c c 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404, simplified outline and symbol Description gate (g) mb Simplified outline mb Symbol drain (d) source (s) connected to drain (d) [1] d g 2 MBK106 1 2 3 1 3 MBK116 MBB076 s SOT78 [1] It is not possible to make connection to pin 2 of the SOT404 package. SOT404 (D2-PAK) 1. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors PSMN008-75P; PSMN008-75B N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 25 A Conditions Tj = 25 to 175 °C Tmb = 25 °C; VGS = 10 V Tmb = 25 °C Typ − − − − 7.9 Max 75 75 230 175 8.5 Unit V A W °C mΩ 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain...