PSMN009-100P

PSMN009-100P/100B N-channel enhancement mode field-effect transistor Rev. 01 — 29 April 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PSMN009-100P in SOT78 (TO-220AB) PSMN009-100B in SOT404 (D2-PAK). 2. Features s Low on-state resistance s Fast switching. 3. Applications s High frequency computer motherboard DC to DC converters s OR-ing applications. 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404, simplified outline and symbol Description gate (g) drain (d) source (s) drain (d) g 2 1 MBK106 Simplified outline [1] mb mb Symbol d MBB076 s 3 MBK116 1 2 3 SOT78 (TO-220AB) [1] SOT404 (D2-PAK) It is not possible to make connection to pin 2 of the SOT404 package. Philips Semiconductors PSMN009-100P/100B N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V Tmb = 25 °C VGS = 10 V; ID = 25 A; Tj = 25 °C Typ 7.5 Max 100 75 230 175 8.8 Unit V A W °C mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-s...