PSMN030-150B

Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES ’Trench’ technology Very low on-state resistance Fast switching Low thermal resistance g PSMN030-150B QUICK REFERENCE DATA d SYMBOL VDSS = 150 V ID = 55.5 A RDS(ON) ≤ 30 mΩ s GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. Applications: d.c. to d.c. converters switched mode power supplies The PSMN030-150B is supplied in the SOT404 (D2PAK) Surface mounted package. PINNING - SOT404 PIN 1 2 3 mb gate drain (no connection possible) source drain DESCRIPTION PIN CONFIGURATION mb SYMBOL d g 2 1 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 ˚C to 175˚C Tj = 25 ˚C to 175˚C; RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 150 150 ± 20 55.5 39 222 250 175 UNIT V V V A A A W ˚C December 2000 1 Rev 1.000 Philips Semiconductors Product specification N-channel TrenchMOS transistor AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS IAS Non-repetitive avalanche energy Non...