DISCRETE SEMICONDUCTORS
DATA SHEET
PSMN070-200B; PSMN070-200P N-channel TrenchMOS(TM) transistor
Product specification ...
DISCRETE SEMICONDUCTORS
DATA SHEET
PSMN070-200B; PSMN070-200P N-channel TrenchMOS(TM)
transistor
Product specification August 1999
Philips Semiconductors
Product specification
N-channel TrenchMOS(TM)
transistor
FEATURES
’Trench’ technology Very low on-state resistance Fast switching Low thermal resistance
g
PSMN070-200B; PSMN070-200P
QUICK REFERENCE DATA
SYMBOL
d
VDSS = 200 V ID = 35 A RDS(ON) ≤ 70 mΩ
s
GENERAL DESCRIPTION
SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. Applications: d.c. to d.c. converters switched mode power supplies The PSMN070-200P is supplied in the SOT78 (TO220AB) conventional leaded package. The PSMN070-200B is supplied in the SOT404 surface mounting package.
PINNING
PIN 1 2 3 tab gate drain1 source drain DESCRIPTION
SOT78 (TO220AB)
tab
SOT404 (D2PAK)
tab
2
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 ˚C to 175˚C Tj = 25 ˚C to 175˚C; RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 200 200 ± 20 35 25 140 250 175 UNIT V V V A A A W ˚C
1 It is not possible to make connection to pin:2 of the SOT404 package
Augu...
