PSS8050

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PSS8050 NPN medium power 25 V transistor Product specification Supersedes data of 2002 Nov 18 2004 Aug 10 Philips Semiconductors Product specification NPN medium power 25 V transistor FEATURES High total power dissipation High current capability. APPLICATIONS Medium power switching and muting Amplification Portable radio output amplifier (class-B, push-pull). DESCRIPTION NPN transistor in a SOT54 (TO-92) plastic package. PNP complement: PSS8550. handbook, halfpage PSS8050 QUICK REFERENCE DATA SYMBOL VCEO IC PINNING PIN 1 2 3 collector base emitter DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) MAX. 25 1.5 UNIT V A 1 MARKING TYPE NUMBER PSS8050C PSS8050D MARKING CODE 2 3 MSB033 S8050C S8050D Fig.1 Simplified outline (SOT54). LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) peak base current total power dissipation Tamb ≤ 25 °C; note 1 Tamb ≤ 25 °C; note 2 Tamb ≤ 25 °C; note 3 Tstg Tj Tamb Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 3. Device mounted on a printed-circuit board; single sided cop...