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PSS8550 Dataheets PDF



Part Number PSS8550
Manufacturers Philips
Logo Philips
Description PNP medium power 25 V transistor
Datasheet PSS8550 DatasheetPSS8550 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PSS8550 PNP medium power 25 V transistor Product specification Supersedes data of 2002 Nov 19 2004 Aug 10 Philips Semiconductors Product specification PNP medium power 25 V transistor FEATURES • High total power dissipation • High current capability. APPLICATIONS • Medium power switching and muting • Amplification • Portable radio output amplifier (class-B, push-pull). DESCRIPTION PNP transistor in a SOT54 (TO-92) plastic package. NPN .

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PSS8550 PNP medium power 25 V transistor Product specification Supersedes data of 2002 Nov 19 2004 Aug 10 Philips Semiconductors Product specification PNP medium power 25 V transistor FEATURES • High total power dissipation • High current capability. APPLICATIONS • Medium power switching and muting • Amplification • Portable radio output amplifier (class-B, push-pull). DESCRIPTION PNP transistor in a SOT54 (TO-92) plastic package. NPN complement: PSS8050. handbook, halfpage PSS8550 QUICK REFERENCE DATA SYMBOL VCEO IC PINNING PIN 1 2 3 collector base emitter DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) MAX. −25 −1.5 UNIT V A 1 MARKING TYPE NUMBER PSS8550C PSS8550D MARKING CODE 2 3 MSB033 S8550C S8550D Fig.1 Simplified outline (SOT54). LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) peak base current total power dissipation Tamb ≤ 25 °C; note 1 Tamb ≤ 25 °C; note 2 Tamb ≤ 25 °C; note 3 Tstg Tj Tamb Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 3. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. Operated under pulsed conditions: pulse width tp ≤ 1 s; duty cycle δ ≤ 0.75%. storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector − − − − − − − − − − −65 − −65 MIN. MAX. −40 −25 −6 −1.5 −2 −300 −1 850 900 1 +150 150 +150 V V V A A mA A mW mW W °C °C °C UNIT 2004 Aug 10 2 Philips Semiconductors Product specification PNP medium power 25 V transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 in free air; note 2 in free air; note 3 Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. PSS8550 VALUE 147 139 125 UNIT K/W K/W K/W 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 3. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. Operated under pulsed conditions: pulse width tp ≤ 1 s; duty cycle δ ≤ 0.75%. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS VCB = −35 V; IE = 0 VCB = −35 V; IE = 0; Tamb = 150 °C ICEO IEBO hFE collector-emitter cut-off current emitter-base cut-off current DC current gain DC current gain PSS8550C PSS8550D VCEsat VBEsat VBEon fT Cc collector-emitter saturation voltage base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = −800 mA; IB = −80 mA IC = −800 mA; IB = −80 mA IC = −10 mA; VCE = −1 V IC = −50 mA; VCE = −10 V; f = 100 MHz VCB = 10 V; IE = ie = 0; f = 1 MHz VCE = −25 V; IB = 0 VEB = −6 V; IC = 0 IC = −5 mA; VCE = −1 V IC = −800 mA; VCE = −1 V IC = −100 mA; VCE = −1 V 120 160 − − − 100 − − − −190 − − − − 200 300 −500 −1.2 −1 − 12 mV V V MHz pF MIN. − − − − 45 40 TYP. − − − − − − MAX. −100 −50 −100 −100 − − UNIT nA µA nA nA 2004 Aug 10 3 Philips Semiconductors Product specification PNP medium power 25 V transistor PSS8550 handbook, halfpage 400 MLD958 handbook, halfpage −1200 VBE (mV) −1000 MLD959 hFE 300 (1) (1) −800 200 (2) (2) −600 (3) 100 (3) −400 0 −10−1 −1 −10 −102 −103 −104 IC (mA) −200 −10−1 −1 −10 −102 −103 −104 IC (mA) PSS8550C VCE = −1 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. PSS8550C VCE = −1 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 DC current gain as a function of collector current; typical values. Fig.3 Base-emitter voltage as a function of collector current; typical values. −103 handbook, halfpage MLD960 handbook, halfpage −1200 MLD962 VBEsat (mV) VCEsat (mV) −1000 (1) (2) −800 −102 −600 (1) (3) (2) −400 (3) −10 −10−1 −1 −10 −102 −103 − 104 IC (mA) −200 −10−1 −1 −10 −102 −103 −104 IC (mA) PSS8550C IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. PSS8550C IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2004 Aug 10 4 Philips Semiconductors Product specification PNP medium power 25 V transistor PSS8550 103 handbook, halfpage RCEsat (Ω) 102 MLD961 handbook, halfpage −2.5 IC (A) −2 MLD963 (3) (2) (1) (4) (5) (6) (7) (8) (9) (10) −1.5 10 −1 1 (1) (2) (3) −0.5 0 −10−1 −1 −10 −102 −103 −104 IC (.


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