ServiceSAR Controller
RSB12JS2
Diodes
Bi Direction ESD Protection Diode (Silicon Epitaxial Planer)
RSB12JS2
zApplication ESD Protection
zFea...
Description
RSB12JS2
Diodes
Bi Direction ESD Protection Diode (Silicon Epitaxial Planer)
RSB12JS2
zApplication ESD Protection
zFeatures 1) Low capacitance 2) Bi direction 3) Ultra small mold type (EMD6)
zAbsolute maximum ratings (Ta=25°C) Power dissipation Junction temperature Storage temperature
Pd Tj Tstg
150 mW/Total 150 °C −55 to 150 °C
zElectrical characteristics (Ta=25°C) (∗Rating of per diode)
Characteristic Zener Voltage Reverse current Junction capacitance Symbol Vz IR Ct Test Condition Iz= VR= f= VR= 5 mA 9V 1MHz 0V Standard MIN. MAX. 9.6 V 14.4 V 0.1µA 1 pF TYP.
∗ Please pay attention to static electricity when handling. ∗ Zener voltage (Vz) shall be measured at 40ms after loading current.
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RSB12JS2
Diodes
zExternal dimensions (Unit : mm)
1.0 ± 0.1
0.5 ± 0.05 0.5
(1)
0.5
(3) (2)
(3)
(2)
(1)
0 to 0.1
(4) (5) (6)
(4)
(5)
(6)
0.22 ±0.05
0.13 ± 0.05
(3)…N/C (6)…N/C
1.6 ± 0.1
zOthers
Characteristic Equipment Composition IEC-61000-4-2 Charge discharge Capacitance Discharge resistance Repeat by 10 times No erroneous operation Contact In air : 150 pF : 330Ω
Criterion
: ± 8 kV : ± 15 kV
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RSB12JS2
Diodes
zRecommended mounting pad layout sizes
OPEN (3) 0.5 0.25 0.15 (2) 0.5 (1)
0.4
0.45
0.3
(4)
(5)
(6) OPEN
1.55
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Appendix
Notes
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