RS8235KHFD

RSB6.8S Diodes ESD Protection diode RSB6.8S !Application Noise suppression on signal line !External dimensions (Units : mm) !Features 1) Small surface mounting type. (EMD2) 2) High reliability. 1.2±0.05 1.6±0.1 0.8±0.05 F7 0.3±0.05 0.6±0.1 0.12±0.05 !Construction Silicon epitaxial planar ROHM : EMD2 EIAJ : SC-79 JEDEC : SOD-523 !Circuit !Absolute maximum ratings (Ta=25°C) Parameter Peak pulse power (tp=10×1000µs) Power dissipation Junction temperature Storage temperature Operation temperature Symbol Ppk P Tj Tstg Topr Limits 10 150 150 −55∼+150 −55∼+150 Unit W mW °C °C °C !Electrical characteristics (Ta=25°C) Parameter Zener voltage Reverse current Junction capacitance Symbol VZ IR Ct Min. 5.780 − − Typ. − − 30 Max. 7.820 0.5 − Unit V µA pF IZ=1mA VR=3.5V VR=0V, F=1MHz Conditions ∗Zener voltage (Vz) shall be measured at 40ms after loading current. RSB6.8S Diodes !Others Item Equipment composition Criterion IEC-61000-4-2 Charge discharge capacitance Discharge resistamce Repeat by 10 times No erroneous operation Contact In air : 150pF : 330Ω : ±8kV : ±15kV !Electrical characteristic curves (Ta=25°C) CAPACITANCE BETWEEN TERMINALS : Ct (pF) 100 100 REVERSE SURGE POWER DISSIPATION : PRSM (W) 10 10 1 0 1 2 3 4 5 6 7 1 0.1 1 PULSE WIDTH : TW (ms) 10 REVERSE VOLTAGE : VR (V) Fig.1 Capacitance between terminals characteristics Fig.2 Surge power dissipation Appendix Notes No technical content pages of this document may be reproduced in any form or tra...