RSA6.1J4

Diodes ESD Protection diode RSA 6.1J4 RSA6.1J4 1.2±0.1 1.6±0.1 0.45 1.55 zApplication ESD protection zFeatures 1) Ultra small mold type. (EMD5) 2) High reliability. zConstruction Silicon epitaxial planar zDimensions (Unit : mm) zLand size figure (Unit : mm) 1.6±0.1 0.22±0.05 (5) (4) 0.13±0.05 0.4 0.25 0.15 0.30.15 0.25 (1) (2) 0.5 0.5 1.0±0.1 (3) 0～0.1 0.5±0.05 ROHM : EMD5 JEITA : SC-75A Size dot (year week factory) zTaping specifications (Unit : mm) 0.5 0.5 EMD5 zStructure 4.0±0.1 2.0±0.05 φ1.5 +0.1 −0 0.3±0.1 1.75±0.1 1.65±0.01 8.0±0.2 3.5±0.05 1.65±0.1 5.5±0.2 0~0.1 1PIN 1.7±0.05 4.0±0.1 φ0.8±0.1 0.65±0.1 zAbsolute maximum ratings (Ta=25°C) Param eter Sym bol Peak puls e power-1 (tp=10×1000us ) Peak puls e power-2 (tp=8×20us ) Junction tem perature Ppk Ppk Tj Storage tem perature Ts tg Lim its 10 80 150 -55 to +150 Unit W W ℃ ℃ zElectrical characteristics (Ta=25°C) Param eter Sym bol Min. Typ. Max. Zener voltage Revers e current Forward voltage Capacitance between term inals VZ 6.1 - 7.20 IR - - 1.0 VF - - 1.0 Ct - 35 - Unit Conditions V IZ=1m A µA VR=3.0V V IF=100m A pF f=1MHz,VR=0V Rev.C 1/2 ZENER VOLTAGE:Vz(Ｖ) Diodes zElectrical characteristic curves (Ta=25°C) RSA6.1J4 ZENER CURRENT:Iz(mA) 10 1 Ta=25℃ 0.1 Ta=-25℃ Ta=75℃ Ta=125℃ Ta=150℃ 0.01 0.001 6 6.5 7 7.5 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS REVERSE CURRENT:IR (nA) 1000 100 10 1 0.1 0.01 0.001 0.0001 0.00001 80 Ta=150℃ Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 0.5 1 1...