Document
S822T/S822TW/S822TRW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Observe precautions for handling. Electrostatic sensitive device.
Applications
For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA.
Features
D Low supply voltage D Low current consumption D 50 W input impedance at 945 MHz D Low noise figure D High power gain
2
1
2
1
94 9279
13 579
13 653
13 566
3
4
3
4
S822T Marking: 822 Plastic case (SOT 143) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
S822TW Marking: W22 Plastic case (SOT 343) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
1
2
13 654
13 566
4
3
S822TRW Marking: WSF Plastic case (SOT 343R) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
Document Number 85050 Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600 1 (8)
S822T/S822TW/S822TRW
Vishay Telefunken Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 12 6 2 8 30 150 –65 to +150 Unit V V V mA mW °C °C
Tamb ≤ 125 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage DC forward current transfer ratio Test Conditions VCE = 12 V, VBE = 0 VCB = 8 V, IE = 0 VEB = 1 V, IC = 0 IC = 1 mA, IB = 0 IC = 5 mA, IB = 0.5 mA VCE = 3 V, IC = 1 mA Symbol Min Typ Max Unit ICES 100 mA ICBO 100 nA IEBO 1 mA V(BR)CEO 6 V VCEsat 0.1 0.4 V hFE 40 90 150
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Transition frequency Collector-base capacitance Test Conditions VCE = 3 V, IC = 1 mA, f = 500 MHz VCE = 2 V, IC = 1.5 mA, f = 500 MHz VCB = 1 V, f = 1 MHz ZS = ZSopt, f = 450 MHz, VCE = 2 V, IC = 0.5 mA ZS = ZSopt, f = 945 MHz, VCE = 3 V, IC = 1 mA ZS = ZSopt, f = 945 MHz, VCE = 2 V, IC = 1.5 mA VCE = 2 V, IC = 0.5 mA, f = 450MHz VCE = 3 V, IC = 1 mA, f = 945 MHz VCE = 2 V, IC = 1.5 mA, f = 945 MHz VCE = 2 V, f = 500 MHz VCE = 3 V, IC = 1 mA, f = 945 MHz VCE = 2 V, IC = 1.5 mA, f = 945 MHz Symbol fT Ccb Min Typ 4.7 5.2 0.2 1.1 Fopt 1.8 2 Gpe e @Fopt o t IC Re(h11e) ( ) 13.5 12.5 14.0 3 50 50 Max Unit GHz GHz pF dB dB dB dB dB dB mA
Noise figure
Power g gain Collector current for fT max Real part of input impedance
W W
www.vishay.de • FaxBack +1-408-970-5600 2 (8)
Document Number 85050 Rev. 3, 20-Jan-99
S822T/S822TW/S822TRW
Vishay Telefunken Common Emitter S–Parameters
Z0 = 50 W, Tamb = 25_C, unless otherwise specified S11 VCE/V IC/mA f/MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 LIN MAG 0.974 0.967 0.956 0.941 0.926 0.907 0.890 0.870 0.851 0.833 0.814 0.794 0.773 0.919 0.897 0.864 0.824 0.781 0.735 0.693 0.647 0.605 0.567 0.526 0.491 0.458 ANG deg –4.0 –7.9 –11.8 –15.6 –19.0 –22.5 –25.8 –29.3 –32.3 –35.6 –39.0 –42.4 –45.6 –6.9 –13.7 –19.8 –25.7 –31.0 –36.1 –40.5 –44.6 –48.5 –52.4 –56.4 –60.1 –64.4 LIN MAG 1.86 1.84 1.82 1.79 1.75 1.72 1.68 1.66 1.63 1.60 1.58 1.57 1.55 4.86 4.78 4.62 4.41 4.21 4.00 3.82 3.62 3.46 3.30 3.16 3.04 2.92 S21 ANG deg 175.2 169.7 164.2 158.9 153.9 149.2 145.0 141.0 136.1 132.6 128.6 124.9 121.2 171.8 163.4 155.7 148.3 141.3 135.3 129.4 124.3 118.9 114.3 110.0 105.7 102.0 LIN MAG 0.012 0.024 0.035 0.046 0.056 0.066 0.075 0.084 0.092 0.099 0.108 0.115 0.121 0.012 0.023 0.034 0.043 0.051 0.058 0.064 0.071 0.076 0.081 0.085 0.090 0.094 S12 ANG deg 86.4 82.4 78.6 75.1 71.7 69.0 66.4 63.9 61.1 59.0 56.9 54.8 52.7 84.3 78.4 73.0 68.4 64.0 60.6 58.2 54.7 52.0 49.8 48.1 46.1 44.9 LIN MAG 0.997 0.993 0.87 0.979 0.968 0.959 0.951 0.940 0.930 0.924 0.913 0.904 0.895 0.992 0.979 0.957 0.933 0.909 0.881 0.858 0.836 0.814 0.796 0.778 0.763 0.747 S22 ANG deg –2.3 –4.8 –6.9 –9.3 –11.4 –13.1 –15.2 –16.9 –18.8 –20.4 –22.2 –24.0 –25.7 –3.6 –7.1 –10.2 –13.0 –15.6 –17.3 –19.2 –20.7 –22.3 –23.6 –24.9 –26.3 –27.5
0.5
2
1.5
Document Number 85050 Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600 3 (8)
S822T/S822TW/S822TRW
Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified)
C cb – Collector Base Capacitance ( pF ) 0
13619
50 P tot – Total Power Dissipation ( mW ) 40 30 20 10 0 25 50 75 100 125 150 Tamb – Ambient Temperature ( °C )
0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 5 VCB – Collector Base Voltage ( V )
13621
Figure 1.. Total Power Dissipation vs. Ambient Temperature
7000 f T – Transition Frequency ( MHz ) f=500MHz 6000 5000 4000 3000 2000 1000 0 0
13620
Figure 3.. Collector Base Capacitance vs.