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S822TRW Dataheets PDF



Part Number S822TRW
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description Silicon NPN Planar RF Transistor
Datasheet S822TRW DatasheetS822TRW Datasheet (PDF)

S822T/S822TW/S822TRW Vishay Telefunken Silicon NPN Planar RF Transistor Observe precautions for handling. Electrostatic sensitive device. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption D 50 W input impedance at 945 MHz D Low noise figure D High power gain 2 1 2 1 94 9279 13 579 13 653 13 566 3 4 3 4 S822T Marking: 822 Plastic case (SOT 143) 1 = Collector, 2 = Emitter,.

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S822T/S822TW/S822TRW Vishay Telefunken Silicon NPN Planar RF Transistor Observe precautions for handling. Electrostatic sensitive device. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption D 50 W input impedance at 945 MHz D Low noise figure D High power gain 2 1 2 1 94 9279 13 579 13 653 13 566 3 4 3 4 S822T Marking: 822 Plastic case (SOT 143) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter S822TW Marking: W22 Plastic case (SOT 343) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter 1 2 13 654 13 566 4 3 S822TRW Marking: WSF Plastic case (SOT 343R) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Document Number 85050 Rev. 3, 20-Jan-99 www.vishay.de • FaxBack +1-408-970-5600 1 (8) S822T/S822TW/S822TRW Vishay Telefunken Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 12 6 2 8 30 150 –65 to +150 Unit V V V mA mW °C °C Tamb ≤ 125 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage DC forward current transfer ratio Test Conditions VCE = 12 V, VBE = 0 VCB = 8 V, IE = 0 VEB = 1 V, IC = 0 IC = 1 mA, IB = 0 IC = 5 mA, IB = 0.5 mA VCE = 3 V, IC = 1 mA Symbol Min Typ Max Unit ICES 100 mA ICBO 100 nA IEBO 1 mA V(BR)CEO 6 V VCEsat 0.1 0.4 V hFE 40 90 150 Electrical AC Characteristics Tamb = 25_C, unless otherwise specified Parameter Transition frequency Collector-base capacitance Test Conditions VCE = 3 V, IC = 1 mA, f = 500 MHz VCE = 2 V, IC = 1.5 mA, f = 500 MHz VCB = 1 V, f = 1 MHz ZS = ZSopt, f = 450 MHz, VCE = 2 V, IC = 0.5 mA ZS = ZSopt, f = 945 MHz, VCE = 3 V, IC = 1 mA ZS = ZSopt, f = 945 MHz, VCE = 2 V, IC = 1.5 mA VCE = 2 V, IC = 0.5 mA, f = 450MHz VCE = 3 V, IC = 1 mA, f = 945 MHz VCE = 2 V, IC = 1.5 mA, f = 945 MHz VCE = 2 V, f = 500 MHz VCE = 3 V, IC = 1 mA, f = 945 MHz VCE = 2 V, IC = 1.5 mA, f = 945 MHz Symbol fT Ccb Min Typ 4.7 5.2 0.2 1.1 Fopt 1.8 2 Gpe e @Fopt o t IC Re(h11e) ( ) 13.5 12.5 14.0 3 50 50 Max Unit GHz GHz pF dB dB dB dB dB dB mA Noise figure Power g gain Collector current for fT max Real part of input impedance W W www.vishay.de • FaxBack +1-408-970-5600 2 (8) Document Number 85050 Rev. 3, 20-Jan-99 S822T/S822TW/S822TRW Vishay Telefunken Common Emitter S–Parameters Z0 = 50 W, Tamb = 25_C, unless otherwise specified S11 VCE/V IC/mA f/MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 LIN MAG 0.974 0.967 0.956 0.941 0.926 0.907 0.890 0.870 0.851 0.833 0.814 0.794 0.773 0.919 0.897 0.864 0.824 0.781 0.735 0.693 0.647 0.605 0.567 0.526 0.491 0.458 ANG deg –4.0 –7.9 –11.8 –15.6 –19.0 –22.5 –25.8 –29.3 –32.3 –35.6 –39.0 –42.4 –45.6 –6.9 –13.7 –19.8 –25.7 –31.0 –36.1 –40.5 –44.6 –48.5 –52.4 –56.4 –60.1 –64.4 LIN MAG 1.86 1.84 1.82 1.79 1.75 1.72 1.68 1.66 1.63 1.60 1.58 1.57 1.55 4.86 4.78 4.62 4.41 4.21 4.00 3.82 3.62 3.46 3.30 3.16 3.04 2.92 S21 ANG deg 175.2 169.7 164.2 158.9 153.9 149.2 145.0 141.0 136.1 132.6 128.6 124.9 121.2 171.8 163.4 155.7 148.3 141.3 135.3 129.4 124.3 118.9 114.3 110.0 105.7 102.0 LIN MAG 0.012 0.024 0.035 0.046 0.056 0.066 0.075 0.084 0.092 0.099 0.108 0.115 0.121 0.012 0.023 0.034 0.043 0.051 0.058 0.064 0.071 0.076 0.081 0.085 0.090 0.094 S12 ANG deg 86.4 82.4 78.6 75.1 71.7 69.0 66.4 63.9 61.1 59.0 56.9 54.8 52.7 84.3 78.4 73.0 68.4 64.0 60.6 58.2 54.7 52.0 49.8 48.1 46.1 44.9 LIN MAG 0.997 0.993 0.87 0.979 0.968 0.959 0.951 0.940 0.930 0.924 0.913 0.904 0.895 0.992 0.979 0.957 0.933 0.909 0.881 0.858 0.836 0.814 0.796 0.778 0.763 0.747 S22 ANG deg –2.3 –4.8 –6.9 –9.3 –11.4 –13.1 –15.2 –16.9 –18.8 –20.4 –22.2 –24.0 –25.7 –3.6 –7.1 –10.2 –13.0 –15.6 –17.3 –19.2 –20.7 –22.3 –23.6 –24.9 –26.3 –27.5 0.5 2 1.5 Document Number 85050 Rev. 3, 20-Jan-99 www.vishay.de • FaxBack +1-408-970-5600 3 (8) S822T/S822TW/S822TRW Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified) C cb – Collector Base Capacitance ( pF ) 0 13619 50 P tot – Total Power Dissipation ( mW ) 40 30 20 10 0 25 50 75 100 125 150 Tamb – Ambient Temperature ( °C ) 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 5 VCB – Collector Base Voltage ( V ) 13621 Figure 1.. Total Power Dissipation vs. Ambient Temperature 7000 f T – Transition Frequency ( MHz ) f=500MHz 6000 5000 4000 3000 2000 1000 0 0 13620 Figure 3.. Collector Base Capacitance vs.


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