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S852 Dataheets PDF



Part Number S852
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description Silicon NPN Planar RF Transistor
Datasheet S852 DatasheetS852 Datasheet (PDF)

S852T/S852TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption D 50 W input impedance at 945 MHz 1 D Low noise figure D High power gain 1 13 581 94 9280 13 652 13 570 2 3 2 3 S852T Marking: 852 1 = Collector, 2 = Base, 3 = Emitter S852TW Marking: W52 Plastic.

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S852T/S852TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption D 50 W input impedance at 945 MHz 1 D Low noise figure D High power gain 1 13 581 94 9280 13 652 13 570 2 3 2 3 S852T Marking: 852 1 = Collector, 2 = Base, 3 = Emitter S852TW Marking: W52 Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 12 6 2 8 30 150 –65 to +150 Unit V V V mA mW °C °C Tamb ≤ 125 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W Document Number 85052 Rev. 3, 20-Jan-99 www.vishay.de • FaxBack +1-408-970-5600 1 (7) S852T/S852TW Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage DC forward current transfer ratio Test Conditions VCE = 12 V, VBE = 0 VCB = 8 V, IE = 0 VEB = 1 V, IC = 0 IC = 1 mA, IB = 0 IC = 5 mA, IB = 0.5 mA VCE = 3 V, IC = 1 mA Symbol Min ICES ICBO IEBO V(BR)CEO 6 VCEsat hFE 40 Typ Max Unit 100 mA 100 nA 1 mA V 0.4 V 150 0.1 90 Electrical AC Characteristics Tamb = 25_C, unless otherwise specified Parameter Transition frequency q y Collector-base capacitance Noise figure Test Conditions VCE = 3 V, IC = 1 mA, f = 500 MHz VCE = 2 V, IC = 1.5 mA, f = 500 MHz VCB = 1 V, f = 1 MHz ZS = ZSopt, f = 450 MHz, VCE = 2 V, IC = 0.5 mA ZS = ZSopt, f = 945 MHz, VCE = 3 V, IC = 1 mA ZS = ZSopt, f = 945 MHz, VCE = 2 V, IC = 1.5 mA VCE = 2 V, IC = 0.5 mA, f = 450MHz VCE = 3 V, IC = 1 mA, f = 945 MHz VCE = 2 V, IC = 1.5 mA, f = 945 MHz VCE = 2 V, f = 500 MHz VCE = 3 V, IC = 1 mA, f = 945 MHz VCE = 2 V, IC = 1.5 mA, f = 945 MHz Symbol fT fT Ccb Fopt Fopt Fopt Gpe @Fopt Gpe @Fopt Gpe @Fopt IC Re(h11e) Re(h11e) Min Typ Max Unit 4.7 GHz 5.2 GHz 0.25 pF 1.1 dB 1.8 2 11.5 10.5 12 3 50 50 dB dB dB dB dB mA Power g gain Collector current for fT max Real part of input impedance W W www.vishay.de • FaxBack +1-408-970-5600 2 (7) Document Number 85052 Rev. 3, 20-Jan-99 S852T/S852TW Vishay Telefunken Common Emitter S–Parameters Z0 = 50 W, Tamb = 25_C, unless otherwise specified S11 VCE/V IC/mA f/MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 LIN MAG 9.976 0.969 0.955 0.939 0.920 0.901 0.881 0.861 0.838 0..


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