S8550

S8550 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PCM : 0.625 W （Tamb=25℃） Collector current A ICM : - 0.5 Collector-base voltage V(BR)CBO : - 40 V 1 2 3 1. EMITTER 2. BASE 3. COLLECTOR ELECTRICAL CHARACTERISTICS（Tamb=25℃ Symbol voltage voltage V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE（1） unless otherwise specified） Test conditions IE=0 IB=0 IC=0 IE=0 IB=0 IC=0 85 50 MIN TYP MAX UNIT V V V Parameter Collector-base breakdown Ic= -100μA , Ic=- 0.1 mA， IE=-100μA， VCB= -40 VCE=-20 VEB= - 3 VCE= -1 V, VCE= -1 V, V, V, V， - 40 - 25 -5 Collector-emitter breakdown Emitter-base breakdown current current current voltage Collector cut-off Collector cut-off Emitter cut-off - 0.1 - 0.2 μA μA μA - 0.1 300 IC= 50mA IC= 500mA DC current gain(note) HFE（2） Collector-emitter saturation voltage Base-emitter saturation Base-emitter voltage voltage VCE(sat) VBE(sat) VBE IC=-500mA, IB= 50 mA IC=-500mA, IB= 50 mA IE=-100mA VCE=- 6 V, IC=-20mA 150 - 0.6 V V V - 1.2 - 1.4 Transition frequency fT MHz f = 30MHz CLASSIFICATION OF HFE(1) Rank Range B 85-160 C 120-200 D 160-300 Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com ...