S8550LT1
HIGH VOLTAGE TRANSISTOR: (PNP) FEATURES
Die Size 0.44*0.44mm Power dissipation PCM : 225mW (Tamb=25℃) Collector current ICM : 0.5A Collector-base voltage V(BR)CBO : 40V
PNP EPITAXIAL SILICON TRANSISTORS
SOT—23
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage voltage
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE(1)
Test conditions
Ic= 100µA , IE=0 Ic= 1 mA,IB=0 IE= 100µA,IC=0 VCB= 30V , IE=0 VEB= 5V,IC=0 VCE= 1V, IC= 150mA VCE= 1V, IC= 500mA IC= 500mA, IB= 50 mA IC= 500mA, IB= 50 mA IC= 10mA, VCE =1V
MIN
30 21 5.0
TYP
MAX
UNIT
V V V
Collector-emitter breakdown Emitter-base breakdown current current
voltage
Collector cut-off Emitter cut-off
1.0 100 120 40 500 1.2 1.0 400
µA nA
DC
current
gain(note) HFE(2)
Collector-emitter saturation voltage Base-emitter saturation Base-emitter voltage voltage
VCE(sat) VBE(sat) VBE(on)
mV V V
CLASSIFICATION OF HFE(1)
Rank Range B9C
120-200
B9D
160-300
B9E
280-400
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Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail:
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