S8D

MCC Features
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# S8A THRU S8M 8 Amp Silicon Rectifier 50 to 1000 Volts DO-214AB (SMCJ) (Round Lead) H For Surface Mount Applications Extremely Low Thermal Resistance Easy Pick And Place High Temp Soldering: 250°C for 10 Seconds At Terminals High Current Capability Maximum Ratings Operating Temperature: -55°C to +150°C Storage Temperature: -55°C to +150°C Maximum Thermal Resistance; 8°C/W Junction To Lead Maximum Recurrent Peak Reverse Voltage 50V 100V 200V 400V 600V 800V 1000V Maximum RMS Voltage 35V 70V 140V 280V 420V 560V 700V Maximum DC Blocking Voltage 50V 100V 200V 400V 600V 800V 1000V DIM A B C D E F G H J Cathode Band Microsemi Part Number S8A S8B S8D S8G S8J S8K S8M Device Marking S8A S8B S8D S8G S8J S8K S8M J A C E F G D B DIMENSIONS INCHES MIN .200 .177 .002 --.053 .168 .320 .239 .234 MM MIN 5.08 4.70 .05 --1.35 4 .27 8.13 6.08 5.95 Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward IF(AV) 8.0A TJ = 75°C Current Peak Forward Surge IFSM 300A 8.3ms, half sine Current Maximum 1.20V IFM = 8.0A; Instantaneous VF Forward Voltage TJ = 25°C* Maximum DC Reverse Current At IR 10µA TJ = 25°C Rated DC Blocking 100µA TJ = 100°C Voltage Typical Junction CJ 150pF Measured at Capacitance 1.0MHz, VR=4.0V *Pulse test: Pulse width 200 µsec, Duty cycle 2% MAX .214 .203 .005 .02 .067 .179 .330 .243 .240 MAX 5.43 5.30 ....