S9014

SS9014 SS9014 Pre-Amplifier, Low Level & Low Noise High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 50 45 5 100 450 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) VBE (on) Cob fT NF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Base Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Current Gain Bandwidth Product Noise Figure Test Condition IC =100µA, IE =0 IC =1mA, IB =0 IE =100µA, IC =0 VCB =50V, IE =0 VEB =5V, IC =0 VCE =5V, IC =1mA IC =100mA, IB =5mA IC =100mA, IB =5mA VCE =5V, IC =2mA VCB =10V, IE =0 f=1MHz VCE =5V, IC =10mA VCE =5V, IC =0.2mA f=1KHz, RS=2KΩ 150 0.58 60 280 0.14 0.84 0.63 2.2 270 0.9 10 Min. 50 45 5 50 50 1000 0.3 1.0 0.7 3.5 V V pF MHz dB Typ. Max. Units V V V nA nA hFE Classification Classification hFE A 60 ~ 150 B 100 ~ 300 C 200 ~ 600 D 400 ~ 1000 ©2002 Fairchild Semiconduct...