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MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR ARRAY 〉
SA01, SA02, SA04, SA07
THYRISTOR ARRAY
SA SERIES FOR STROBE FLASHER
SA01, SA02, SA04, SA07
OUTLINE DRAWING
+0.5 15 0
Dimensions in mm
4 MAX 1
2
1 2 3 3 1 4 × 3 = 12 1 5 4 0.5 1 0.5 5 2 3
1 2 3 4 5 MAIN THYRISTOR: ANODE MAIN THYRISTOR: GATE MAIN AND AUX. THYRISTOR: CATHODE AUX. THYRISTOR: GATE AUX. THYRISTOR: ANODE
SA SERIES
APPLICATION Automatic strobe flasher
FAMILY CONSTITUTION
Guide No. (ASA100) 25 32 25 Type SA01 SA02 SA04 Commutating characteristics C M=700µ F, ITM=200A, C C=2.2µ F C M=1000µF, ITM=230A, C C=2.5µ F C M=700µ F, ITM=200A, C C=1.4µ F Aux thyristor High sensitive IGT ≤=250µA High holding current IH ≥ 25mA High holding current IH ≥ 25mA High sensitive IGT ≤ 250µA Application Compact strobe Middle class strobe
SA07
Built-in strobe
MAXIMUM RATINGS (T a= –20 ~ +60 °C, unless otherwise noted)
Symbol VDRM V1 VDSM V1 VRRM – IFGM Topr Tstg Parameter Repetitive peak off-state voltage Non-repetitive peak off-state voltage Repetitive peak reverse voltage Pulse current ability Peak gate forward current Operating ambient temperature Storage temperature 0.5 0.3 0.5 1.0 480 600 480 600 400 See electrical characteristics 1.0 1.0 0.5 0.3 SA01 Main Aux Main SA02 Aux 400 480 600 450 600 Main SA04 Aux Main SA07 Aux Unit V V V A A °C °C
–20 ~ +60 –40 ~ +125
V1. Connect 1k Ω resistor between gate to cathode.
3 MIN
4
8 MAX 10 MAX
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR ARRAY 〉
SA01, SA02, SA04, SA07
THYRISTOR ARRAY
SA SERIES FOR STROBE FLASHER
ELECTRICAL CHARACTERISTICS
Symbol IDRM IRRM IGT VGT IH Parameter Repetitive peak off-state current V1 Repetitive peak reverse current Gate trigger current Gate trigger voltage Holding current V2
(Ta=25°C, unless otherwise noted)
SA01 Main 100 100 30 1.5 — Aux 20 20 0.25 1.0 1.0 Main 100 100 30 1.5 — SA02 Aux 100 100 30 1.5 25 Main 100 100 50 2.0 — SA04 Aux 100 100 30 1.5 25 Main 100 100 80 1.5 — SA07 Aux 20 20 0.25 1.0 1.0 Unit µA µA mA V mA
V1. Connect 1k Ω resistor between gate to cathode. V2. Minimum value
SR1FM
L 22k υ trg VCM CM
+ −
υ trg 0 CC i1 1 SAOX 5 2 4 10n 470 470 i1 0 tw IP 47n i5 1k iG iG 0 iG
t
10 10k 47n
t
3
t
Fig. 1 Test circuit
i5 0
t
Fig. 2 The voltage and current waveforms
SA120
1 1 MAIN THYRISTOR 2
2
3
4 5
5
AUX THYRISTOR 4 3
Fig. 3 Pin position and Equivalent circuit
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR ARRAY 〉
SA01, SA02, SA04, SA07
THYRISTOR ARRAY
SA SERIES FOR STROBE FLASHER
COMMUTATION CHARACTERISTICS IN STROBE APPLICATION
SA series commutates at arbitrary conducting duration t w under following condition. (See Fig. 1, 2) Please confer following sheets in case that CM or ITM is different from mentioned value. (See shown under)
COMMUTATING CHARACTERISTICS
Symbol VCM CM ITM L CC Parameter Main capacitor charging voltage Main capacitor Peak on-state current Anode reactor Commutating capacitor
(Ta=25 °C, Single pulse operation)
SA01 700 200 2.2 SA02 SA04 350 1000 230 25 2.5 1.4 700 200 SA07 Unit V µF A µH µF
NOTICE
Please consider counterplans against induced noise across common impedance. (between common cathode 3 and the ground point of trigger cicuit for the auxiliary thyristor)
PERFORMANCE CURVES
GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE MAIN THYRISTOR SA01,07 AUX THYRISTOR GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 0.6 0.5 0.4 0.3 0.2 0.1 0 –0.1 MAIN THYRISTOR –0.2 –0.3 –0.4 –20 –10 0 10 20 30 40 50 60 70 80 JUNCTION TEMPERATURE (°C) AUX THYRISTOR TYPICAL EXAMPLE
100 (%)
GATE TRIGGER CURRENT (T j = t°C) GATE TRIGGER CURRENT (T j = 25°C)
SA02,04 AUX THYRISTOR
101 –20 –10 0 10 20 30 40 50 60 70 80 JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE (T j = t°C) GATE TRIGGER VOLTAGE (T j = 25°C)
100 (%)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR ARRAY 〉
SA01, SA02, SA04, SA07
THYRISTOR ARRAY
SA SERIES FOR STROBE FLASHER
HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE 104 7 5 3 2
GATE TRIGGER CURRENT VS. GATE TRIGGER PULSE WIDTH
100 (%)
100 (%)
TYPICAL EXAMPLE SA01,07 AUX THYRISTOR
HOLDING CURRENT (T j = t°C) HOLDING CURRENT (T j = 25°C)
GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC)
SA01,07 AUX THYRISTOR
103 7 MAIN 5 THYRISTOR 3 2 102 7 5 SA02,04 AUX THYRISTOR 3 2 101 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE TRIGGER PULSE WIDTH (µs)
SA02,04 AUX THYRISTOR
101 –20 –10 0 10 20 30 40 50 60 70 80 JUNCTION TEMPERATURE (°C)
COMMUTATING CHARACTERISTICS (SA01,SA02) 1000 1400
COMMUTATING CHARACTERISTICS (SA04) VCM = 350V L = 25µH Ta = 25°C SEE FIG.1
MAIN CAPACITOR (µF)
600
MAIN CAPACITOR (µF)
800
1200
1000
CC = 1.7µF
CC = 1.8µF
CC = 1.9µF
CC = 2.0µF
400
CC = 2.1µF F CC = 2.2µ CC = 2.3µF
800
CC = 1.8µF
CC = 2.0µF
CC = 2.2µF
CC = 2.4µF
CC = 2.6µF
200
600 400 160
0 120
VCM = 350V Ta = 25°C L = 25µH SEE FIG.1 140 160 180 200 220
CC = 2.8µF
26.