polyfet rf devices
SA702
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF ...
polyfet rf devices
SA702
General Description Silicon VDMOS and LDMOS
transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t
transistors with high input impedance and high efficiency.
TM
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS
TRANSISTOR 50.0 Watts Single Ended Package Style AA HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Device Dissipation 110 Watts Junction to Case Thermal Resistance o 1.40 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V
6.5 A
RF CHARACTERISTICS (
SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 13 85 TYP
50.0 WATTS OUTPUT )
MAX UNITS dB % 20:1 TEST CONDITIONS Idq = 0.40 A, Vds = 28.0 V, F = Idq = 0.40 A, Vds = 28.0 V, F =
175 MHz 175 MHz
η
VSWR
Relative Idq = 0.40 A, Vds = 28.0 V, F = 175 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback C...