S DU/D9916
S amHop Microelectronics C orp. Augus t , 2002
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODU...
S DU/D9916
S amHop Microelectronics C orp. Augus t , 2002
N-C hannel E nhancement Mode Field E ffect
Transistor
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
( m W ) TYP
ID
20A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
25 @ V G S = 4.5V 35 @ V G S = 2.7V
R ugged and reliable. TO-252 and TO-251 P ackage.
D
D G S
G D
S
G
S DU S E R IE S TO-252AA(D-P AK)
S DD S E R IE S TO-251(l-P AK)
S
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed
a
S ymbol V DS V GS @ TJ=125 C ID IDM IS PD T J , T S TG
Limit 20 12 20 60 20 50 0.4 -55 to 150
Unit V V A A A W W/ C C
Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Derate above 25 C Operating and S torage Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC R JA 3 50 C /W C /W
S DU/D9916
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS
c
S ymbol
Condition
V GS = 0V, ID = 250uA V DS = 20V, V GS = 0V V GS = 8V, V DS =0V V DS = V GS , ID = 250uA V GS =4.5V, ID = 6.0A V GS =2.5V, ID = 5.2A V DS = 5V, V GS = 4.5V V DS = 10V, ID = 6.0A
Min Typ C Max Unit
20 1 V uA 100 nA 0.9 1.0 25 35 20 7 24 650 270 80 1.5 30 40 V
m ...